Positive photosensitive polyimide resin, resin composition and preparation method and application thereof

A polyimide resin, positive photosensitive technology, used in optomechanical equipment, photosensitive materials for optomechanical equipment, optics, etc., can solve the problem of low adhesion of positive photosensitive polyimide resin, difficult IC The actual use requirements of the chip, etc., to achieve the effects of low dielectric constant, high graphic resolution, steepness, and high adhesion

Pending Publication Date: 2022-03-25
MINSEOA (BEIJING) ADVANCED MATERIALS DEV CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the reported positive photosensitive polyimide resin has low adh

Method used

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  • Positive photosensitive polyimide resin, resin composition and preparation method and application thereof
  • Positive photosensitive polyimide resin, resin composition and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0098] Embodiment 1, preparation hydroxyl-containing polyimide resin, composition and polyimide film

[0099] In a 500ml three-necked round-bottomed flask equipped with a mechanical stirrer, a thermometer and a nitrogen protection device, add 220g N-methylpyrrolidone (NMP) and 21.50g 1,3 diamino-4,6 dihydroxybenzene in sequence, and stir at room temperature Dissolved to form a homogeneous hydroxyl-containing diamine solution. Then, weigh 18.56g of TDNA, 18.61g of 4,4'-oxydiphthalic anhydride and 1.48g of phthalic anhydride, add it into the hydroxyl-containing diamine solution under stirring, and continue stirring for 4 hours; then, add 30g of toluene to the above In the reaction solution, heat to reflux temperature (120-200° C.), react for 12 hours to distill off part of the toluene and take out the generated water. After the reaction, the reaction solution was poured into 5L of deionized water to precipitate a solid, which was then filtered and vacuum-dried to obtain a hydro...

Embodiment 2

[0102] Embodiment 2, preparation hydroxyl-containing polyimide resin, composition and polyimide film

[0103] In a 500ml three-necked round-bottomed flask equipped with a mechanical stirrer, a thermometer and a nitrogen protection device, add 220g NMP and 36.57g 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane successively, stir and dissolve at room temperature A diamine solution is formed. Then, 18.56g TDNA, 18.61g 4,4'-oxydiphthalic anhydride and 0.76g phthalic anhydride were added to the diamine solution, and the stirring was continued for 4h; then, 30g toluene was added to the above reaction solution and heated to reflux temperature (120 -200°C), reacted for 12h to distill off part of the toluene and take out the generated water. After the reaction, the reaction solution was poured into 5L of deionized water to precipitate a solid, which was then filtered and vacuum-dried to obtain a hydroxyl-containing polyimide resin A2 with a weight-average molecular weight Mw of 2210...

Embodiment 3

[0106] Embodiment 3, preparation hydroxyl-containing polyimide resin, composition and polyimide film

[0107] In a 500ml three-necked round-bottom flask equipped with a mechanical stirrer, a thermometer and a nitrogen protection device, add 220g NMP and 21.51g 1,3-diamino-4,6-dihydroxybenzene in sequence, stir and dissolve at room temperature to form a diamine solution . Then add 23.47g DMDPNA, 18.61g 4,4'-oxydiphthalic anhydride to the diamine solution, then add 0.83g phthalic anhydride, and continue stirring for 4h; then, add 30g toluene to the above reaction solution and heat to reflux Temperature (120-200°C), react for 12h to distill off part of the toluene and take out the generated water. After the reaction, the reaction solution was poured into 5L deionized water to precipitate a solid, which was then filtered and vacuum-dried to obtain a polyimide resin A3 with a weight-average molecular weight Mw of 21500 as measured by GPC.

[0108] In a Class 1000 clean room equip...

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Abstract

The invention discloses a positive photosensitive polyimide resin, a resin composition and a preparation method and application thereof. The positive photosensitive polyimide resin is prepared from total dianhydride, total diamine and a molecular weight regulator. The total dianhydride is any one of the following A1)-A2): A1) norbornane dianhydride containing a siloxane structure as shown in a formula I; a2) is composed of norbornane dianhydride containing a siloxane structure and aromatic tetracid dianhydride not containing the siloxane structure, wherein the norbornane dianhydride is shown in the formula I; the total diamine is any one of the following B1)-B2): B1) is aromatic diamine containing at least one phenolic hydroxyl group; the total dianhydride (A, B, B2) is composed of aromatic diamine containing at least one phenolic hydroxyl group and diamine containing no phenolic hydroxyl group, the molar ratio of the total dianhydride to the total diamine is 0.9: 1-1: 1, and the weight-average molecular weight of the positive photosensitive polyimide resin is 15000-25000. The prepared patterned polyimide film has the advantages of being low in dielectric constant, low in dielectric loss, low in water absorption rate, high in cohesiveness and the like.

Description

technical field [0001] The invention belongs to the technical field of polymer materials, and in particular relates to a positive photosensitive polyimide resin, a resin composition and a preparation method and application thereof. Background technique [0002] Polyimide (PI) film has the advantages of high and low temperature resistance, corrosion resistance, high insulation, low dielectric constant and low dielectric loss, excellent mechanical properties, chemical corrosion and radiation resistance, and is widely used in chips in the semiconductor manufacturing process Surface passivation, stress absorbing buffer, and interlayer dielectric film of multilayer interconnection structure, signal line distribution, α-particle shielding layer, micro-welding of packaging substrate in advanced microelectronic packaging (BGA, CSP, SiP, WLP, etc.) It has important application value in the ball making process of the ball, the stress buffer layer of the plastic package circuit, and th...

Claims

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Application Information

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IPC IPC(8): C08G73/10G03F7/004G03F7/075G03F7/09
CPCC08G73/1075C08G73/106C08G73/1042G03F7/004G03F7/0757G03F7/09
Inventor 陈兴贾斌李涛路延东魏广彪杨彦飞李广凯刘久琳冯培龙杨士勇
Owner MINSEOA (BEIJING) ADVANCED MATERIALS DEV CO LTD
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