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N-polarity GaN/AlGaN heterojunction epitaxial structure and preparation method thereof

An epitaxial structure, heterojunction technology, applied in climate sustainability, final product manufacturing, sustainable manufacturing/processing, etc., to suppress interfacial reactions, enhance 2D electron gas confinement, and reduce dislocations

Pending Publication Date: 2022-03-25
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current research on III-nitride materials focuses on metal polar materials, and there are few studies on N polar materials.

Method used

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  • N-polarity GaN/AlGaN heterojunction epitaxial structure and preparation method thereof
  • N-polarity GaN/AlGaN heterojunction epitaxial structure and preparation method thereof
  • N-polarity GaN/AlGaN heterojunction epitaxial structure and preparation method thereof

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Embodiment 1

[0038] This embodiment provides a method for preparing an N-polar GaN / AlGaN heterojunction epitaxial structure, which specifically includes:

[0039] (1) Substrate pretreatment: Si(111) is used as the substrate for epitaxial growth, firstly in H 2 SO 4 、H 2 o 2 and H 2 Treatment in the mixed solution of O, the ratio of the mixed solution is H 2 SO 4 :H 2 o 2 :H 2 O=2:1:3, then put them into acetone and absolute ethanol in turn, ultrasonically clean them for 5 minutes respectively, take out the substrate and blow dry with high-purity nitrogen;

[0040] (2) Epitaxial growth of N-polar AlN buffer layer at low temperature: Using pulsed laser deposition (PLD) technology, put the pretreated substrate into the cavity, and evacuate until the pressure is less than 1.0×10 -6 torr, the substrate is first annealed at 800°C for 30 minutes in a nitrogen-rich atmosphere, and then the temperature is raised to 550°C to grow the N-polar AlN buffer layer. During the above growth proces...

Embodiment 2

[0052] This embodiment provides a method for preparing an N-polar GaN / AlGaN heterojunction epitaxial structure, which specifically includes:

[0053] (1) Substrate pretreatment: Si(111) is used as the substrate for epitaxial growth, firstly in H 2 SO 4 、H 2 o 2 and H 2 Treatment in the mixed solution of O, the ratio of the mixed solution is H 2 SO 4 :H 2 o 2 :H 2 O=2:1:3, then put them into acetone and absolute ethanol in turn, ultrasonically clean them for 10 minutes respectively, take out the substrate and blow dry with high-purity nitrogen;

[0054] (2) Epitaxial growth of N-polar AlN buffer layer at low temperature: Using PLD technology, put the pretreated substrate into the cavity, and vacuum until the pressure is less than 1.0×10 -6 torr, the substrate is first annealed at 800°C for 30 minutes in a nitrogen-rich atmosphere, and then the temperature is raised to 630°C to grow the N-polar AlN buffer layer. During the above growth process, the laser energy density...

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Abstract

The invention discloses an N-polarity GaN / AlGaN heterojunction epitaxial structure and a preparation method thereof. The N-polarity GaN / AlGaN heterojunction epitaxial structure comprises a low-temperature N-polarity AlN buffer layer, a non-doped N-polarity AlGaN buffer layer, a non-doped N-polarity AlGaN layer and a non-doped N-polarity GaN layer, wherein the low-temperature N-polarity AlN buffer layer, the non-doped N-polarity AlGaN buffer layer, the non-doped N-polarity AlGaN layer and the non-doped N-polarity GaN layer sequentially grow on a silicon substrate. The N-polarity GaN / AlGaN heterojunction epitaxial structure provided by the invention is a high-quality N-polarity GaN / AlGaN heterojunction epitaxial structure, and a high-efficiency power electronic device can be realized.

Description

technical field [0001] The invention relates to the technical field of photoelectric device detectors, in particular to an N-polarity GaN / AlGaN heterojunction epitaxial structure and a preparation method thereof. Background technique [0002] Group III nitride materials represented by GaN have become hot materials for third-generation semiconductors due to their wide bandgap, excellent electrical and thermal conductivity, high critical breakdown electric field, and high limit operating temperature. The AlGaN / GaN heterojunction can generate a high-density, high-mobility two-dimensional electron gas at the interface by virtue of its own spontaneous and piezoelectric polarization effects, and is widely used in HEMTs, rectifiers and other devices. However, due to the difficulty of obtaining single-crystal GaN substrates, the growth of GaN materials relies on heteroepitaxy techniques. The advantages of large size and low cost of Si substrate make it the first choice for GaN hete...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0304H01L31/0352H01L31/036H01L31/109H01L31/18
CPCH01L31/109H01L31/1848H01L31/1852H01L31/036H01L31/03048H01L31/03044H01L31/035272Y02P70/50
Inventor 王文樑江弘胜李国强李林浩黄星悦
Owner SOUTH CHINA UNIV OF TECH