Check patentability & draft patents in minutes with Patsnap Eureka AI!

High-sensitivity image sensor pixel structure

An image sensor, high-sensitivity technology, used in image communication, electrical solid-state devices, semiconductor devices, etc., can solve the problem of increasing the parasitic capacitance of the FD point, reduce the thickness of the gate oxide, improve the signal-to-noise ratio, and reduce the capacitance. Effect

Pending Publication Date: 2022-03-29
WILL SEMICON (SHANGHAI) CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In image sensor pixels, as the source follower area increases, the 1 / f noise (flicker nosie) becomes smaller, but a larger source follower area will increase the parasitic capacitance of the FD point

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-sensitivity image sensor pixel structure
  • High-sensitivity image sensor pixel structure
  • High-sensitivity image sensor pixel structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Such as figure 2 , Figure 4 Shown:

[0058] Including a photodiode 101 placed in a semiconductor substrate, a transfer transistor 103, a floating diffusion node 104, a reset transistor 105, a thick gate oxygen source follower transistor 111, a thin gate oxygen source follower transistor 112, a row gate transistor 108, and a power supply 106 And pixel output 109;

[0059] By using the thick gate oxide source follower transistor 111 / thin gate oxide source follower transistor 112, the charge-to-voltage conversion factor can be improved under the premise of reducing 1 / f noise, thereby improving the sensitivity of the image sensor.

[0060] The specific principle is:

[0061] By increasing the gate oxide thickness of the thick gate oxygen source follower transistor 111 connected to the floating diffusion node 104 and reducing the area of ​​the thick gate oxygen source follower transistor 111, the capacitance between the floating diffusion node 104 and the substrate is r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a high-sensitivity image sensor pixel structure. The high-sensitivity image sensor pixel structure comprises a photodiode (PD), a transmission transistor (TX), a floating diffusion node (FD), a reset transistor (RESET), a thick gate oxide follower transistor (Thick gate oxide SF), a thin gate oxide follower transistor (Thin gate oxide SF), a row gating transistor (SELECT), a power supply (VDD) and a pixel output (VOUT) which are arranged in a semiconductor substrate. A double-source follower transistor, namely a thick gate oxide source follower transistor / a thin gate oxide source follower transistor, is used for replacing a traditional single-source follower transistor, so that on the premise of reducing 1 / f noise, the charge voltage conversion factor (Conversion Gain; c.G.), thereby improving the sensitivity of the image sensor.

Description

technical field [0001] The invention relates to a CMOS image sensor, in particular to an image sensor pixel structure with high conversion gain and high sensitivity. Background technique [0002] CMOS image sensors are widely used in portable digital cameras, mobile phones, smart cars, security and medical fields. Most of these applications require advanced performance such as wide dynamic range, high speed and high sensitivity. [0003] Sensitivity, as the most important performance index in image sensors, is defined as the ratio of output signal change to input light change. And when the light level is very low, the noise level of the image sensor determines the image quality. The signal-to-noise ratio (SNR) is used to measure the sensitivity of an image sensor when considering the entire range of light from dark to bright. [0004] Signal-to-noise ratio (SNR) can be improved by strengthening the signal and reducing the noise. [0005] Such as figure 1 As shown, it is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/146H04N5/374
CPCH01L27/14612H01L27/14614H01L27/14643H04N25/76
Inventor 王菁旷章曲陈多金陈杰刘志碧张富生付保利
Owner WILL SEMICON (SHANGHAI) CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com