Microwave diode with low noise and low working voltage and preparation method thereof
A technology with working voltage and low noise, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., and can solve problems such as high avalanche noise and large avalanche threshold voltage
Pending Publication Date: 2022-04-12
NANTONG UNIVERSITY
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0007] In view of the deficiencies in the prior art, this application solves the technical problems of high avalanche noise and large avalanche threshold voltage in traditional IMPATT microwave diodes, and provides a microwave diode with low noise and low operating voltage and its preparation method
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0046] See figure 1 , a microwave diode with low noise and low operating voltage in this embodiment, the microwave diode with low noise and low operating voltage is a vertical heterojunction structure composed of InSe layer 1 and BP layer 5, the upper layer of the heterojunction structure is InSe layer 1, the lower layer is BP layer 5, in which the BP layer 5 is divided into three regions from left to right: BP region a2, BP region b3 and BP region c4, and the bottom of BP layer 5 is provided with SiO 2 Layer 6, the InSe layer 1 is placed directly above the BP region a2; the Ti / Au double-layer metal electrode a11 is drawn above the InSe layer 1; the Ti / Au double-layer metal electrode b41 is drawn above the BP region c4; the BP region SiO below c4 2 The Ti / Au double-layer metal electrode c42 is drawn out from the layer 6 .
[0047] The InSe layer 1 has a thickness of 10 nm; the BP layer 5 has a thickness of 10 nm; the InSe layer 1 has the same width as the BP region a 2, both...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a low-noise and low-working-voltage microwave diode and a preparation method thereof. The microwave diode is of a vertical heterojunction structure composed of indium selenide (InSe) and black phosphorus (BP). The traditional material for preparing the IMPATT microwave diode is creatively replaced by the two-dimensional material BP, and the unique ballistic avalanche mechanism of the BP is utilized, so that the IMPATT microwave diode in the invention is obviously lower than the traditional avalanche device in the aspect of avalanche noise, and the performance of the IMPATT microwave diode is improved. The avalanche threshold voltage is also reduced by 2-3 orders of magnitude compared with a conventional device. In addition, the bipolar characteristic of BP is utilized, so that chemical doping does not need to be performed on the material when the IMPATT diode is prepared, and the preparation difficulty of the device is reduced. Compared with an IMPATT diode prepared from a traditional material, the IMPATT diode provided by the invention not only has relatively low avalanche noise and avalanche breakdown voltage, but also is simple to prepare, so that the working performance of a device is greatly improved.
Description
technical field [0001] The invention belongs to the technical field of microwave diodes, in particular to a microwave diode with low noise and low working voltage and a preparation method thereof. Background technique [0002] Currently, the IMPATT diode is used as a power semiconductor device for high-frequency microwave electronics, which can produce the highest continuous wave power output in the millimeter wave frequency band (30 GHz to 300 GHz). Compared with low-frequency microwave or infrared systems, millimeter-wave systems have the advantages of light weight, small size, wide frequency bandwidth, all-weather operation, and narrow beamwidth with high resolution, so IMPATT diodes have many advantages in communication and radar system applications. It is widely used in radio astronomy, air traffic control signals and weather radar. [0003] Faced with such a wide range of application prospects, the fabrication process of IMPATT diodes based on silicon (Si) and gallium...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L29/861H01L21/329
Inventor 余晨辉沈倪明秦嘉怡成田恬王鑫
Owner NANTONG UNIVERSITY