Preparation method and application of antiferromagnetic single crystal Mn3Sn with abnormal Hall effect
An anomalous Hall effect and antiferromagnetic technology, applied in the manufacture/processing of electromagnetic devices, single crystal growth, single crystal growth and other directions, can solve the problems of small anomalous Hall effect and low quality of antiferromagnetic single crystals, etc. Achieving the effect of large anomalous Hall effect, simple preparation method and stable anomalous Hall effect
Inactive Publication Date: 2022-04-26
曹桂新
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[0004] At present, the quality of the antiferromagnet single crystal prepared by the prior art preparation method is low, and the anomalous Hall effect of the antiferromagnet single crystal at room temperature is small
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[0025] Example: An antiferromagnetic single crystal Mn with anomalous Hall effect 3 The preparation method of Sn, such as figure 1 As shown, the antiferromagnetic material is Mn 3 Sn single crystal, the Mn 3 The Sn single crystal is a hexagonal crystal system, which belongs to the P63 / mmc space group, and is grown by a self-solvent method to obtain Mn 3 Sn crystal, its concrete preparation method comprises the following steps:
[0026] S1. Mn and Sn are mixed and ground in a molar mass ratio of 7:3, and ground and mixed uniformly to obtain a mixed powder.
[0027] S2. Put the mixed powder prepared in step S1 into an alumina crucible, then put the alumina crucible into a quartz tube, and seal the quartz tube in a vacuum environment. Place the sealed quartz tube in a box furnace for sintering, and set the growth temperature program of the box furnace to raise the temperature to 1100 °C at a rate of 100 °C / h, keep it warm for 24 hours, and then cool down to 900 °C at a rate o...
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The invention discloses a preparation method and application of antiferromagnetic single crystal Mn3Sn with an abnormal Hall effect, and relates to the technical field of condensed state physics / electronic information, and the key points of the technical scheme are as follows: Mn3Sn crystals are obtained through growth by a self-service solvent method, Mn and Sn are ground and uniformly mixed according to a molar mass ratio of 7: 3, the mixture is put into a crucible, the crucible is put into a quartz tube, and the quartz tube is put into a crucible furnace; sealing in vacuum; and sintering the sealed quartz tube in a box-type furnace, heating to 1100 DEG C at the rate of 100 DEG C / h, preserving heat for 24 hours, cooling to 900 DEG C at the rate of 1 DEG C / h, preserving heat for 12 hours, centrifuging at high temperature, and removing redundant cosolvent to obtain the non-collinear antiferromagnet Mn3Sn crystal. The antiferromagnetic Mn3Sn single crystal is prepared by utilizing a self-service solvent method, the preparation method is simple, the cost is low, and the prepared Mn3Sn single crystal has excellent crystal quality; and the prepared Mn3Sn crystal is antiferromagnetic at room temperature, is insensitive to magnetic field disturbance, is not easy to generate a stray magnetic field, and has a relatively large abnormal Hall effect at room temperature.
Description
technical field [0001] The present invention relates to the field of condensed matter physics / electronic information technology, more specifically, it relates to a preparation method of antiferromagnetic single crystal Mn3Sn with anomalous Hall effect and application of Hall device. Background technique [0002] The Hall effect is a basic phenomenon in condensed matter physics, and it is widely used in fields such as determining the carrier type and carrier density of a sample, and measuring the strength of a magnetic field. In 1879, the American physicist Hall applied a vertical magnetic field to an electrified conductor material, and observed a voltage value in the transverse direction perpendicular to the current. He proposed that this was mainly due to the Lorentz force on the electrons that generate the current. Make it move to the two sides of the conductor, thereby generating charge accumulation, and the Hall effect appears. In 1881, Hall discovered the Hall effect i...
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IPC IPC(8): C30B9/06C30B29/52H01L43/10H01L43/14H10N52/01
CPCC30B9/06C30B29/52H10N50/85H10N52/01
Inventor 曹桂新
Owner 曹桂新