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Light emitting diode chip and preparation process thereof

A technology of light-emitting diodes and chips, applied in metal material coating process, vacuum evaporation coating, superimposed layer coating, etc., can solve the problems of poor waterproof and moisture resistance, easy to damage, etc., to strengthen antibacterial self-cleaning performance, avoid damage, improve antibacterial self-cleaning and temperature resistance

Active Publication Date: 2022-04-29
苏州工业园区雨竹半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing light-emitting diode chip, when the chip is used in a high temperature state, has poor waterproof and moisture resistance and is prone to damage

Method used

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  • Light emitting diode chip and preparation process thereof
  • Light emitting diode chip and preparation process thereof
  • Light emitting diode chip and preparation process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029]The invention provides a light-emitting diode chip, which includes a waterproof and moisture-resistant film, and a sapphire substrate, a buffer layer, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, and a transparent conductive layer are arranged inside the waterproof and moisture-resistant film. The buffer layer, N-type semiconductor layer, light-emitting layer, P-type semiconductor layer and transparent conductive layer are sequentially arranged on the top of the sapphire substrate from bottom to top, and the top of the N-type semiconductor layer is electrically connected to an N-type electrode. The P The top of the type semiconductor layer is electrically connected with a P-type electrode, and the waterproof and moisture-resistant film includes: 20.20% zinc oxide by weight percentage, and the rest is trimethyl aluminum; the transparent conductive layer includes: 19.20% by weight percentage Titanium dioxide, 13.60% aluminum, 0.86% gr...

Embodiment 2

[0043] Different from Example 1, the waterproof and moisture-resistant film includes: 30.20% zinc oxide by weight percentage, and the rest is trimethylaluminum; the transparent conductive layer includes: 20.40% titanium dioxide, 15.60% by weight percentage % metal aluminum, 0.96% graphene, and the rest is indium tin oxide.

Embodiment 3

[0045] Different from Examples 1-2, the waterproof and moisture-resistant film includes: 25.20% zinc oxide by weight percentage, and the rest is trimethyl aluminum; the transparent conductive layer includes: 19.80% by weight Titanium dioxide, 14.60% aluminum metal, 0.91% graphene, and the rest is indium tin oxide.

[0046] Take the light-emitting diode chips prepared in the above-mentioned examples 1-3 and the light-emitting diode chips of the control group one, the light-emitting diode chips of the control group two, the light-emitting diode chips of the control group three, the light-emitting diode chips of the control group four, and the control group The light-emitting diode chip of five, the light-emitting diode chip of the control group one has no zinc oxide compared with the embodiment three, the light-emitting diode chip of the control group two has no trimethyl aluminum compared with the embodiment three, and the light-emitting diode chip of the control group three has...

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Abstract

The invention discloses a light-emitting diode chip and a preparation process thereof, and particularly relates to the technical field of light-emitting diodes, and the light-emitting diode chip comprises a waterproof moisture-resistant film, a sapphire substrate, a buffer layer, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer and a transparent conductive layer. The moisture-resistant and waterproof performance of the light-emitting diode chip can be effectively improved, meanwhile, the performance stability of soaking treatment of the chip in high-temperature water liquid is guaranteed, and the chip can be effectively prevented from being damaged; zinc oxide in the waterproof and moisture-resistant film in the formula forms a double-layer zinc oxide coating film outside the sapphire substrate and the whole chip, the antibacterial, self-cleaning and temperature-resistant performance of the chip can be effectively improved, the waterproof and moisture-resistant film is made into a double-layer aluminum oxide passivation layer outside the zinc oxide coating film, and the multiple waterproof and moisture-resistant performance of the chip can be effectively enhanced; and the second layer of zinc oxide coating film and the second layer of aluminum oxide passivation layer directly wrap the whole chip, so that the high-temperature resistance, water resistance and moisture resistance of the chip can be effectively enhanced.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, and more specifically, the invention relates to a light-emitting diode chip and a preparation process thereof. Background technique [0002] Light-emitting diode, referred to as LED, is a commonly used light-emitting device that can efficiently convert electrical energy into light energy, and has a wide range of uses, such as lighting, flat panel displays, and medical devices. Light-emitting diode chips, also known as LED light-emitting chips, are the core components of LED lights. LED light-emitting chips are a semiconductor chip. One end of the chip is attached to a bracket, one end is the negative pole, and the other end is connected to the positive pole of the power supply, so that the entire chip is ringed. Its main function is to convert electrical energy into light energy, and the main material of the chip is single crystal silicon. A semiconductor wafer is composed of a P-t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/42H01L33/44B05D7/14B05D7/24C23C14/08C23C14/18C23C14/24C23C14/35C23C16/40C23C16/455C23C28/00
CPCH01L33/42H01L33/44C23C14/35C23C14/086C23C16/403C23C16/45525C23C14/083C23C14/18C23C14/24C23C28/3455C23C28/322B05D7/14B05D7/24H01L2933/0016B05D2252/00B05D2202/25Y02P70/50
Inventor 刘峰吴铭钦
Owner 苏州工业园区雨竹半导体有限公司