Preparation method of pure-phase RP perovskite thin film

A perovskite and thin film technology, applied in the field of new semiconductor optoelectronics, can solve the problem of difficulty in generating pure equals, and achieve the effects of low cost, good environmental stability, and simple and feasible preparation method.

Pending Publication Date: 2022-04-29
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to propose a method for preparing a pure RP phase perovskite film for the problem that the current two-dimensional RP phase perovskite is difficult to generate a pure phase

Method used

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  • Preparation method of pure-phase RP perovskite thin film
  • Preparation method of pure-phase RP perovskite thin film
  • Preparation method of pure-phase RP perovskite thin film

Examples

Experimental program
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Effect test

Embodiment 1

[0040] Pure RP Phase Perovskite (PEA) 2 FAPb 2 I 7 Film preparation

[0041] The preparation process is as figure 1 shown, including the following steps:

[0042] Step 1: Add 0.4610g (1.0mmol) of PbI 2 , 0.2490g (1.0mmol) of PEAI (C 6 h 5 CH 2 CH 2 NH 3 1), 0.0860g (0.5mmol) of FAI (HC (NH 2 ) 2 1) be dissolved in the mixed solution of DMF and NMP of 1ml, and add the methylammonium chloride (MACl) of 0.0236g (0.35mmol) as additive, wherein the volume ratio of DMF:NMP is 9:1, and preparation concentration is 1mol / L perovskite precursor solution.

[0043] Step 2: Utilize the rotary coating equipment (KW-4A type desktop glue leveler), on the ITO substrate (area is 4cm 2 ) on the deposition precursor solution. Among them, the rotation speed of the spin coating equipment is 4000rpm, the spin time is 10s, the volume of the perovskite precursor for each spin coating is 50μl, the temperature is controlled at 22°C and the humidity is controlled at 60% during the spin coa...

Embodiment 2

[0046] Pure RP Phase Perovskite (PMA) 2 FAPb 2 I 7 Film preparation

[0047] Different from Example 1, the solute in the perovskite precursor is 0.461g (1.0mmol) of PbI 2 , 0.233g (1.0mmol) of PMAI (C 7 h 8 IN), 0.0860g (0.5mmol) of FAI (HC (NH 2 ) 2 1) Dissolve in 1 ml of a mixed solution of DMF and NMP (DMF:NMP=9:1), and add 0.0236 g (0.35 mmol) of methyl ammonium chloride (MACl) as an additive.

Embodiment 3

[0049] Pure RP Phase Perovskite (BA) 2 FAPb 2 I 7 Film preparation

[0050] Different from Example 1, the solute in the perovskite precursor is 0.4610g (1.0mmol) of PbI 2 , 0.201g (1.0mmol) of BAI (CH 3 CH 2 CH 2 NH 3 1), 0.0860g (0.5mmol) of FAI (HC (NH 2 ) 2 1) Dissolve in 1 ml of a mixed solution of DMF and NMP (DMF:NMP=9:1), and add 0.0236 g (0.35 mmol) of methyl ammonium chloride (MACl) as an additive.

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Abstract

The invention relates to a preparation method of a pure-phase RP perovskite thin film. According to the method, after a mixed solution of lead halide and halogenated organic ammonium salt is prepared, a perovskite thin film precursor thin film deposited on a substrate is treated through low-pressure auxiliary treatment, an intermediate phase thin film with good crystallization is formed, and then a pure-phase RP perovskite thin film is formed through heating. The method is low in cost and compatible with large-area thin film preparation, and the obtained perovskite thin film can be used for various photoelectric devices such as solar cells, photoelectric detectors, light emitting diodes and X-ray detectors and has wide application prospects.

Description

technical field [0001] The invention belongs to the field of novel semiconductor optoelectronics, and specifically relates to a method for converting two-dimensional perovskites containing different n values ​​into pure-phase Ruddlesden-Popper (RP) perovskites by using solvent engineering and additive engineering combined with low-pressure auxiliary treatment. The perovskite film prepared by the method can be used in various optoelectronic devices such as solar cells, photodetectors, light emitting diodes and X-ray detectors. Background technique [0002] With the development of science and technology, environmental degradation and energy crisis are becoming more and more serious, which put forward new requirements for human beings to use energy, and the development of optoelectronics has brought new hope to human beings. In recent years, three-dimensional perovskite materials have been widely studied due to their excellent photoelectric properties such as high light absorpt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42
CPCH10K71/12H10K71/40H10K30/30Y02E10/549
Inventor 吴存存梁玉超韩晓静韩佳衡张贤张阳洋郑士建
Owner HEBEI UNIV OF TECH
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