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Preparation method of hexagonal-phase dicerium trioxide monocrystal film

A technology of cerium oxide and single crystal thin film, which is applied in chemical instruments and methods, single crystal growth, single crystal growth, etc. It can solve the problems of less research, inability to exist and preserve stably, and difficulty, and achieve high purity Effect

Inactive Publication Date: 2022-05-10
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Cerium oxide at normal temperature and pressure is relatively stable, but under high temperature or reducing atmosphere, the tetravalent cerium ions in cerium oxide can be partially reduced to trivalent and transformed into non-stoichiometric cerium oxide or even hexagonal phase Cerium oxide, but generally speaking, it is difficult to be completely transformed into hexagonal phase cerium oxide
And under normal conditions, the hexagonal phase cerium oxide is extremely unstable and is easily oxidized to tetravalent cerium, so it cannot exist and store stably in the atmospheric environment
In the prior art, the research on hexagonal ceria is usually obtained by re-reducing ceria at high temperature, but in most cases, hexagonal ceria is mixed with ceria of other structures, and relatively purer ceria can rarely be obtained. Hexagonal phase cerium oxide, so its intrinsic fundamental properties are less studied

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  • Preparation method of hexagonal-phase dicerium trioxide monocrystal film
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  • Preparation method of hexagonal-phase dicerium trioxide monocrystal film

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Embodiment Construction

[0030] see figure 1 , a preferred embodiment of the present invention provides a hexagonal phase cerium oxide (space group is P-3m1, lattice constant is a=b=0.394nm, c=0.51nm, α=β=90°, γ=120 °) the preparation method of monocrystalline thin film, comprises the following steps:

[0031] In step S1, a reaction chamber is provided, and the reaction chamber includes a sample stage.

[0032] In step S2, the cerium block is loaded into the evaporation source, and the evaporation source with the cerium block is installed in the reaction chamber so that the outlet of the evaporation source faces the sample stage.

[0033] In this embodiment, before loading the cerium block into the evaporation source, the cerium block is cleaned to remove thicker oxide impurities on the surface of the cerium block. The cerium block is a high-purity cerium block.

[0034] In this embodiment, the container filled with the cerium block in the evaporation source is a crucible. It can be understood tha...

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Abstract

The invention provides a preparation method of a hexagonal-phase dicerium trioxide monocrystal film, which comprises the following steps: providing a reaction chamber which comprises a sample table; loading the cerium block into an evaporation source; the reaction chamber is vacuumized; heating the evaporation source; the method comprises the following steps: providing a tungsten single crystal substrate, and processing the tungsten single crystal substrate to obtain an atomic level flat surface; the processed tungsten single crystal substrate is placed on the sample table; continuously heating the evaporation source to obtain a cerium film; oxygen is filled into the reaction chamber, so that the cerium film is oxidized into hexagonal-phase dicerium trioxide; and carrying out annealing on the hexagonal-phase dicerium trioxide so as to obtain the hexagonal-phase dicerium trioxide single crystal thin film. The hexagonal-phase dicerium trioxide single crystal film prepared by the method is relatively high in purity.

Description

[0001] This application is a divisional application with an application date of April 21, 2020, an application number of 202010318599.9, and an invention title of "Hexagonal phase cerium oxide single crystal thin film and its preparation method and application". technical field [0002] The invention relates to the technical field of hexagonal phase cerium oxide, in particular to a method for preparing a hexagonal phase cerium oxide single crystal thin film. Background technique [0003] Cerium ions have two different chemical valence states, positive trivalent and positive tetravalent, so the most common stoichiometric cerium oxides are: hexagonal cerium oxide containing only trivalent cerium ions and tetravalent cerium ions only cerium dioxide. Since the chemical valence state of cerium ion is very easy to convert, there are many non-stoichiometric oxidation forms between hexagonal ceria and ceria. Cerium oxide at normal temperature and pressure is relatively stable, but ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B1/02C30B29/16C30B29/64C23C14/16C23C14/24C23C14/58
CPCC30B1/02C30B29/16C30B29/64C23C14/16C23C14/24C23C14/5853
Inventor 冯卫郝群庆陈秋云刘琴谭世勇
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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