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Gate oxide trap characterization method based on noise of weak inversion region of MOSFETs (Metal Oxide Semiconductor Field Effect Transistor)

A technology of weak inversion area and gate oxide layer, which is applied in the direction of instruments, measuring devices, measuring electricity, etc., and can solve problems such as narrow energy range

Pending Publication Date: 2022-05-27
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the 1 / f noise-based characterization technique of gate oxide traps in MOSFETs uses low-frequency noise data in the strong inversion region and near the threshold voltage when extracting the variation of trap density with energy, and does not use low-frequency noise in the weak inversion region. Noisy data, resulting in an overly narrow range of energies being characterized

Method used

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  • Gate oxide trap characterization method based on noise of weak inversion region of MOSFETs (Metal Oxide Semiconductor Field Effect Transistor)
  • Gate oxide trap characterization method based on noise of weak inversion region of MOSFETs (Metal Oxide Semiconductor Field Effect Transistor)
  • Gate oxide trap characterization method based on noise of weak inversion region of MOSFETs (Metal Oxide Semiconductor Field Effect Transistor)

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Embodiment 1

[0063] See figure 1 , figure 1 This is a flow chart of a method for characterizing gate oxide traps based on noise in the weak inversion region of MOSFETs provided by an embodiment of the present invention. As shown in the figure, the method for characterizing traps in gate oxide layers based on noise in the weak inversion region of MOSFETs in this embodiment ,include:

[0064] Step 1: Measure the transfer characteristics of the MOSFETs to be tested and the drain current noise power spectrum under different gate voltages;

[0065] Specifically, step 1 includes:

[0066] The drain voltage is selected, and under this test condition, the transfer characteristics of the MOSFETs to be tested and the drain current noise power spectrum under different gate voltages are measured, where,

[0067] If the MOSFETs to be tested are n-type MOSFETs, then the selected drain voltage satisfies If the MOSFETs to be tested are p-type MOSFETs, then the selected drain voltage satisfies, wher...

Embodiment 2

[0117] In this embodiment, different types of MOSFETs are used as examples to specifically describe the method for characterizing the gate oxide traps in the first embodiment.

[0118] For n-type MOSFETs, the gate oxide traps are characterized as follows:

[0119] Step 1) Measure the transfer characteristic and the drain current noise power spectrum under different gate voltages.

[0120] Specifically, first, the drain voltage is selected, and the drain voltage satisfies In this embodiment, the drain voltage V is selected D =0.05V, measure the transfer characteristics of MOSFETs under noise test conditions I D -V G .

[0121] Secondly, first fix the gate voltage V G , measure the noise power spectrum Then change the gate voltage V G , measure the noise power spectrum under different gate voltages

[0122] Step 2) Determine the range of the drain current of the weak inversion region of the MOSFETs.

[0123] Specifically, for n-type MOSFETs, the drain current I D =...

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Abstract

The invention relates to a gate oxide trap characterization method for weak inversion region noise of MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistor). The method comprises the following steps of: 1, measuring transfer characteristics of a MOSFETs device to be measured and drain current noise power spectrums under different gate voltages; step 2, obtaining the range of drain current of a weak inversion region of the MOSFETs device to be tested; step 3, obtaining a sub-threshold swing; 4, selecting the drain current of any weak inversion region to obtain a capacitance sum corresponding to the drain current of the weak inversion region; 5, obtaining the distance between trap energy and a band edge according to the drain current of the selected weak inversion region; 6, obtaining the trap density of the gate oxide layer according to the drain current noise power spectrum and the capacitance sum; and 7, selecting drain current of different weak inversion regions, and repeating the steps 4-6 to obtain the distance between a plurality of groups of trap energy and the band edge and the trap density of the gate oxide layer so as to obtain the energy distribution of the trap density of the gate oxide layer. According to the gate oxide trap characterization method disclosed by the invention, the energy characterization range is obviously expanded.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device characterization, and in particular relates to a gate oxide trap characterization method based on MOSFETs weak inversion region noise. Background technique [0002] A key factor affecting the performance and reliability of MOSFETs is the level and distribution of trap levels in the gate oxide. [0003] Gate oxide traps significantly affect the 1 / f noise of MOSFETs, so the 1 / f noise can be used to reflect the trapping characteristics of the gate oxide of MOSFETs. Currently, 1 / f noise-based trap characterization techniques for gate oxides of MOSFETs use low-frequency noise data in the strong inversion region and near the threshold voltage when extracting the variation of trap density with energy, and do not use low-frequency noise in the weak inversion region. Noisy data, resulting in an unduly narrow range of energies being characterized. SUMMARY OF THE INVENTION [0004] In order ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2626
Inventor 陈华李金龙张彦军王佳硕李仲阳马琪辉何亮
Owner XIDIAN UNIV