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High-voltage MOSFET transistor terminal structure and preparation method thereof

A terminal structure and transistor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve high efficiency, reduce curvature, and reduce electric field strength

Pending Publication Date: 2022-06-10
江苏铨力微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to improve the problem that the size of the terminal structure is too large, this application provides a high-voltage MOSFET transistor terminal structure and its preparation method

Method used

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  • High-voltage MOSFET transistor terminal structure and preparation method thereof
  • High-voltage MOSFET transistor terminal structure and preparation method thereof
  • High-voltage MOSFET transistor terminal structure and preparation method thereof

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Embodiment Construction

[0044] Specifically, coating a photoresist with a thickness of about 7000-12000Å, exposing and developing to form the second conductive N+ doped region window region, and wet etching to clean the thermal oxide layer 9 in the second conductive N+ doped region window region , so that the silicon in the epitaxial layer 10 is exposed. Then, a second conductive doped N+ impurity is implanted into the above exposed window by semiconductor-specific implantation and doping equipment to form a terminal cut-off region. Remove the photoresist implanted outside the doping window through wet and dry processes, and form a terminal cut-off region for the above through a high-temperature furnace tube, and diffuse the above-mentioned impurities at a certain temperature and time to form a stop ring 5 and an N+ cut-off region.

[0045] S5 , a plurality of polycrystalline field plates 3 are formed on the oxide layer 9 .

[0046] Specifically, N+ doped polysilicon with a thickness of 2000-12000Å ...

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Abstract

The invention relates to a high-voltage MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) terminal structure and a preparation method thereof, the high-voltage MOSFET terminal structure comprises a substrate layer, the substrate layer comprises a substrate and an epitaxial layer, an oxide layer is formed on the epitaxial layer, a plurality of doped windows are transversely formed in the oxide layer, the doped windows extend to the epitaxial layer, and the doped windows are arranged on the substrate; the sizes of the plurality of doping windows are sequentially reduced along the direction far away from the main junction; and the transverse variable doping structure comprises a plurality of variable doping voltage dividing rings formed in the epitaxial layer, each variable doping voltage dividing ring is located at the corresponding doping window, and a plurality of floating PN junctions with the junction depths gradually decreased in the direction away from the main junction are formed between the lower portions of the bottoms of the variable doping voltage dividing rings and the substrate layer. The terminal structure has the technical effects that the terminal structure can keep a smaller size while keeping pressure resistance, so that the problem that the terminal structure occupies a larger chip area can be solved.

Description

technical field [0001] The field involved in this application, in particular, relates to a terminal structure and a preparation method of a high-voltage MOSFET transistor. Background technique [0002] At present, the application range of high-voltage planar MOSFET transistors is basically used as a modulation switch and synchronous rectification. The terminal structure of the transistor surrounds the active area of ​​the transistor in a ring shape on a plane, and the main junction is located at the boundary between the active area and the terminal structure. Because its working environment is usually a harsh state of high temperature and high pressure, if the terminal of the transistor is damaged, it will cause damage to the transistor, thereby further causing damage to other surrounding components. Therefore, the high voltage resistance of the terminal structure is one of the important references for evaluating MOS devices. [0003] The terminal structure of existing hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/40H01L29/78H01L21/336
CPCH01L29/0619H01L29/404H01L29/78H01L29/66477
Inventor 江子标刘贺
Owner 江苏铨力微电子有限公司