Testing circuit and testing method for dynamic resistance of gallium nitride power device
A technology of power devices and dynamic resistance, which is applied in the field of test circuits for dynamic resistance of gallium nitride power devices, and can solve problems such as the inability to meet the test requirements of dynamic resistance of gallium nitride power devices
Pending Publication Date: 2022-06-21
BEIJING HUAFENG TEST & CONTROL TECH CO LTD
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Therefore, this requires that the switching speed from off to on should be as fast as possible, that is, the faster the current establishment speed of the GaN power device, the better, but the current establishment speed of the GaN power device in the test circuit in the prior art It is often tens of microseconds or even longer, so it cannot meet the test requirements for the dynamic resistance of GaN power devices
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[0038] The words "first, second, third, etc." in the description and claims, or similar terms such as module A, module B, module C, etc., are only used to distinguish similar objects, and do not represent a specific ordering of objects, which can be understood Where permitted, the specific order or sequence may be interchanged to enable the embodiments of the invention described herein to be practiced in sequences other than those illustrated or described herein.
[0039] In the following description, the reference numerals indicating steps, such as S110, S120, etc., do not necessarily mean that this step will be performed, and the sequence of the preceding and following steps may be interchanged or performed simultaneously if permitted.
[0040] The term "comprising" used in the description and claims should not be interpreted as being limited to what is listed thereafter; it does not exclude other elements or steps. Accordingly, it should be interpreted as specifying the pre...
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The invention belongs to the field of integrated circuit testing, and particularly provides a test circuit and a test method for dynamic resistance of a gallium nitride power device. The test circuit comprises a driving branch, a high-voltage switch branch, a current source branch and a voltage measurement branch. Wherein the current source branch comprises a charging and discharging sub-branch. The driving branch is connected to a grid electrode of the tested gallium nitride power device; the high-voltage switch branch is connected in parallel with the drain electrode and the source electrode of the tested gallium nitride power device; the current source branch is connected in parallel with the drain electrode and the source electrode of the tested gallium nitride power device; and the voltage measurement branch is connected in parallel with the drain electrode and the source electrode of the measured gallium nitride power device. Based on the technical scheme provided by the invention, the establishment speed of the current during the dynamic resistance test of the gallium nitride power device can be improved, and the detection of the problem of the gallium nitride power device is facilitated.
Description
technical field [0001] The invention relates to the field of power electronics, in particular to a test circuit and a test method for the dynamic resistance of a gallium nitride power device. Background technique [0002] As the representative of the third-generation semiconductor devices, gallium nitride (GaN) devices have the advantages of large band gap, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness, making them widely used in power electronics. field occupies an important position. As the application of GaN power devices becomes more and more extensive, the measurement of GaN power devices becomes more and more important. [0003] The dynamic test of GaN power devices mainly refers to the test of the dynamic resistance of GaN power under dynamic working conditions. During dynamic testing of GaN power devices, due to the action of high-voltage stress, the current collapse effect ...
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IPC IPC(8): G01R27/08G01R31/26
CPCG01R27/08G01R31/2642
Inventor 闫肃陈宏亮刘惠鹏
Owner BEIJING HUAFENG TEST & CONTROL TECH CO LTD