Preparation method of low-dimensional nano material electrical device under extreme high voltage
A low-dimensional nano and low-dimensional material technology, applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve the problem of low-dimensional materials difficult to integrate micro-nano electrical devices, and achieve high electrode quality and stability. , good electrical contact effect
Pending Publication Date: 2022-06-24
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology
[0006] The purpose of this application is to address the above-mentioned deficiencies in the prior art, to provide a preparation method of low-dimensional nanomaterial electrical devices under extreme high pressure, to overcome the problem that low-dimensional materials are difficult to integrate micro-nano electrical devices on the diamond anvil surface, and to solve Solved the device preparation problem of the electrical characteristics of low-dimensional materials under high pressure, and provided new ideas for exploring the preparation of low-dimensional materials micro-nano devices under high pressure
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Embodiment 1
[0067] combined with image 3 As shown, a method for preparing a low-dimensional nanomaterial electrical device under extreme high pressure, specifically, is a method for preparing a graphene material-based field-effect electrical device on a diamond anvil, and the specific steps are as follows:
[0068] In the first step, after ultrasonically cleaning the diamond anvil 1 with ethanol, acetone and isopropanol in turn, blow it dry with a nitrogen gun, and wipe the diamond anvil surface 1 clean with a clean cotton swab dipped in ethanol under a stereo microscope.
[0069] In the second step, the graphite strip samples, the hexagonal boron nitride samples and the low-dimensional materials (the graphene samples are selected for demonstration in this embodiment) that have been mechanically peeled off on the silicon substrate in advance are vertically stacked and transferred to the diamond anvil anvil surface;
[0070] Select polydimethylsiloxane (PDMS) polymer film, cut the appropr...
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Abstract
The invention discloses a preparation method of a low-dimensional nano material electrical device under extreme high voltage, which is characterized in that a photoetching process aiming at a diamond anvil cell is designed; and a mechanically stripped graphite or graphene sample and an evaporated metal material are used for integrating an electrical device based on a low-dimensional nano material on the diamond anvil cell. The specific technological process comprises the steps of cleaning, spin coating of photoresist, photoetching, evaporation of a metal electrode (or transfer of mechanically stripped graphite and graphene electrodes), photoresist removal, transfer of a dielectric layer material, transfer of a low-dimensional material, spin coating of photoresist, photoetching, evaporation of the metal electrode, photoresist removal and wire leading. The invention aims to provide the preparation method of the low-dimensional nano material electrical device under the extreme high voltage, the problem that the low-dimensional material is difficult to integrate the micro-nano electrical device on the diamond anvil surface is solved, the difficulty in preparing the electrical device under the high voltage of the low-dimensional material is solved, and a new idea is provided for exploring the preparation of the low-dimensional material micro-nano device under the high voltage.
Description
technical field [0001] The present application relates to the field of extreme pressure electrical devices, in particular to a method for preparing low-dimensional nanomaterial electrical devices under extreme high pressure. Background technique [0002] The Diamond Counter Anvil (DAC) is a high-pressure device commonly used in the world, which can provide GPa-level extreme pressure. DAC can explore the mechanical-electrical / thermal / chemical coupling effects of materials in situ under the synergy of multi-physics fields. The development and application of DAC technology provides practical ideas for researchers to explore the physical properties of materials under high pressure. At present, researchers have used DAC to realize the exploration of various physical properties of three-dimensional materials under high pressure, such as structure, light emission, light absorption, electrical properties, etc. Low-dimensional materials such as graphene, transition metal sulfides (M...
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IPC IPC(8): H01L21/44H01L21/34H01L21/027H01L29/43H01L29/49
CPCH01L29/66969H01L21/0274H01L29/401H01L29/43H01L29/49H01L29/495
Inventor 陈亚彬韩武孝杜国帅杨龙飞
Owner BEIJING INSTITUTE OF TECHNOLOGYGY