Production of tapes or wafers having regions of low oxygen concentration
A technology of oxygen concentration and area, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of limiting MCL stacking faults and dislocation cascades, impractical, expensive epitaxial growth to produce wafers, etc.
Pending Publication Date: 2022-06-24
LEADING EDGE CRYSTAL TECH INC
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Problems solved by technology
Third, annealing, RTP or depositing thick epitaxial films on thin solar wafers (50 to 300 μm) may not be possible
Unfortunately, this final wafer has a uniform, low-oxygen distribution across its unshapeable material thickness, making it impractical for some applications
Producing wafers by epitaxial growth is expensive and suffers from defects such as stacking faults and dislocation cascades that limit MCLs
Method used
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[0050] While the claimed subject matter will be described in terms of certain embodiments, other embodiments, including those that do not provide all of the benefits and features set forth herein, are also within the scope of the present disclosure. Various structural, logical, process step, and electrical changes may be made without departing from the scope of the present disclosure. Accordingly, the scope of the present disclosure is to be defined only by reference to the appended claims.
[0051] It would be beneficial to fabricate semiconductor devices using silicon materials that exhibit low oxygen content, especially in regions of the material near the wafer surface where the device is fabricated or (in the case of solar cells) absorbs the most sunlight. Oxygen precipitation and BMD counts are directly proportional to the bulk oxygen content, and precipitation is negligible below the critical concentration. Furthermore, for a given oxygen concentration, thermal processi...
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Abstract
A ribbon is formed using a cold initializer facing the exposed side of the melt such that the ribbon floats on the melt. The tape is monocrystalline silicon. The strip is pulled from the silicon melt away from the melt surface at a small angle. The belt is formed at the same speed as pulling. The ribbon is separated from the melt at the crucible wall that forms a stable meniscus. The tape has a thickness of 50 [mu] m to 5 mm between the first surface and an opposing second surface. The band includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to the body of the belt.
Description
[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims priority to provisional patent application filed on August 9, 2019 and assigned to US Patent Application No. 62 / 884,851, the disclosure of which is incorporated herein by reference. technical field [0003] The present disclosure relates to the production of tapes or wafers, such as silicon tapes or wafers for solar energy applications. Background technique [0004] Silicon wafers or slabs can be used, for example, in the integrated circuit or solar cell industry. Previously, diced silicon wafers were fabricated by wire sawing from large silicon ingots or boules made by the floating zone process, the Czochralski (Cz) method, the modified Czochralski method using magnetic field controlled oxygen, or the direct casting method . The oxygen distribution changes were negligible for any cut thickness (wafers < 2 mm thick) through some of these native wafers. Many times, the oxygen distribution on...
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IPC IPC(8): C30B15/06C30B15/00
CPCC30B15/06H01L31/1804H01L31/0288C30B29/06C30B15/14C30B29/64H01L31/028H01L31/04
Inventor 艾莉森·格林利内森·斯托达德杰西·S.·阿佩尔彼得·凯勒曼帕提夫·达戈鲁亚历山大·马丁内斯赛义德·皮鲁兹布兰登·威利亚德查尔斯·鲍恩布赖恩·麦克穆伦大卫·莫雷尔孙大伟
Owner LEADING EDGE CRYSTAL TECH INC