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Diameter expansion of aluminum nitride crystals

A crystal and single crystal technology, applied in the field of preparation of single crystal aluminum nitride, can solve the problems of small angle grain boundaries and dislocations, adverse effects on the quality of growing crystals, waste, etc.

Pending Publication Date: 2022-06-24
晶化成半导体公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional diameter expansion techniques can successfully expand the diameter of grown crystals, but the diameter expansion rate is limited due to adverse effects on the quality of grown crystals
Specifically, excessive variation of the thermal field in conventional techniques can lead to highly defective or even polycrystalline materials, especially at the edges of growing crystals
It can also lead to other defects such as low-angle grain boundaries and dislocations, non-uniform doping, and even crystal cracking
As a result, many traditional diameter expansion efforts can be wasteful and frustrating, as highly defective edge material is often unsuitable for device applications and must be removed from the boule

Method used

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  • Diameter expansion of aluminum nitride crystals
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  • Diameter expansion of aluminum nitride crystals

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Embodiment Construction

[0075] Embodiments of the present invention enable the preparation of high-quality single crystal AlN bulk crystals (ie, ingots and / or substrates) that undergo significant diameter expansion during crystal growth. Figures 1A-1C It is a schematic diagram of various crystals and their related parameters related to the embodiments of the present invention. FIG. 1A shows an exemplary seed crystal 100 having a diameter 102 , a front surface 104 and a back surface 106 . Although the seed crystal 100 is shown as a cylindrical shape with a rounded surface, the seed crystal 100 is not limited to these shapes. Thus, the diameter 102 generally refers to the largest lateral dimension of the seed crystal 100, and thus may correspond to a "width" or "maximum width", eg, for a seed crystal 100 having a non-circular shape. In various embodiments of the present invention, the thickness of the seed crystal 100 is about 0.1 mm to about 3 mm. Typically, the front surface 104 is exposed to inpu...

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Abstract

In various embodiments, an aluminum nitride single crystal is rapidly expanded during growth and has a larger crystal enhancement parameter. The aluminum nitride single crystal can have large ingot mass and volume. The aluminum nitride single crystal can grow from the gas phase under the enhanced radial thermal gradient, and the high diameter expansion rate is achieved.

Description

[0001] Related applications [0002] This application claims the benefit of and priority to US Provisional Patent Application No. 62 / 887,033, filed August 15, 2019, which is incorporated herein by reference in its entirety. technical field [0003] In various embodiments, the present invention relates to the preparation of single crystal aluminum nitride (AlN). Background technique [0004] Aluminum nitride (AlN) holds great promise as a semiconductor material for numerous applications, such as optoelectronic devices (such as short-wavelength light-emitting diodes (LEDs)) and lasers, dielectric layers for optical storage media, electronic substrates, and applications requiring high thermal conductivity. chip carrier, etc. In principle, the properties of AlN allow the emission of light at wavelengths down to about 200 nanometers (nm). Recent work has demonstrated the superior performance of ultraviolet (UV) LEDs fabricated on low-defect AlN substrates fabricated from bulk ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B23/00
CPCC30B29/403C30B23/06C30B23/08C30B23/025C30B25/20
Inventor R·邦德克夫T·米巴赫陈贱峰铃木崇志L·J·邵瓦尔特
Owner 晶化成半导体公司