Novel sealing structure for gallium arsenide crystal growth

A technology of crystal growth and sealing structure, which is applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of inconvenient operation of sealing materials and the need for improvement of sealing effect, and achieve the advantages of connection, convenient operation and firm sealing Effect

Pending Publication Date: 2022-07-01
BEIJING TONGMEI XTAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The inventor found that the operation of the above-mentioned sealing material is inconvenient, and the sealing effect needs to be improved

Method used

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  • Novel sealing structure for gallium arsenide crystal growth
  • Novel sealing structure for gallium arsenide crystal growth
  • Novel sealing structure for gallium arsenide crystal growth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A novel sealing structure for gallium arsenide crystal growth, comprising a quartz tube 1 and a quartz cap 2, the inner wall of the lower end of the quartz cap 2 is provided with internal threads and the outer wall of the quartz tube 1 is provided with threaded holes, so that the quartz cap 2 and the quartz tube are The threaded connection of 1, the side of the quartz cap 2 close to the quartz tube 1 is provided with an accommodating groove 21 along its peripheral surface, the accommodating groove 21 is located between the top of the quartz cap 2 and the inner thread, and the accommodating groove 21 is filled with expanded graphite-basalt fiber composite. The cloth 3, in this way, not only realizes the threaded connection between the quartz cap 2 and the quartz tube 1, the operation is more convenient, and the filled composite cloth 3 has a certain filling performance, which can be fitted with the quartz tube 1, and the expanded graphite expands during the later growth pr...

Embodiment 2

[0039] A novel sealing structure for gallium arsenide crystal growth is carried out according to the method in Example 1, except that the expanded graphite-basalt fiber composite cloth 3 is prepared by the following method:

[0040] The basalt fiber cloth was immersed in water dispersed with expanded graphite for 30 minutes, and the mass ratio of expanded graphite to water was 20:1, and then dried at 80 °C for 30 minutes.

Embodiment 3

[0042] A novel sealing structure for gallium arsenide crystal growth is carried out according to the method in Example 1, except that the expanded graphite-basalt fiber composite cloth 3 is prepared by the following method:

[0043] The basalt fiber cloth was immersed in water dispersed with expanded graphite for 30 minutes, and the mass ratio of expanded graphite to water was 18:1, and then dried at 70 °C for 35 minutes.

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Abstract

The invention relates to the technical field of semiconductors, and particularly discloses a novel sealing structure for gallium arsenide crystal growth, which comprises a quartz tube and a quartz cap in threaded connection with the quartz tube, and the inner wall of the quartz cap is provided with an internal thread and is in threaded connection with the quartz tube; a containing groove is formed in the side, close to the quartz tube, of the quartz cap along the circumferential face of the quartz cap, located between the top of the quartz cap and the inner threads and filled with expanded graphite-basalt fiber composite cloth. The expanded graphite-basalt fiber composite cloth is obtained by dipping basalt fiber cloth in a solvent dispersed with expanded graphite and then drying the basalt fiber cloth. The sealing structure has the characteristics that the sealing operation between the quartz tube and the quartz cap is more convenient, and the sealing effect is excellent.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and more particularly, to a novel sealing structure for gallium arsenide crystal growth. Background technique [0002] GaAs material is an important compound semiconductor material, which has many characteristics different from Si and Ge materials, and can be widely used in light-emitting devices such as lasers, photodetectors and high-frequency devices. [0003] When preparing GaAs single crystal substrate products, polycrystalline GaAs synthesized from high-purity arsenic and high-purity gallium needs to be loaded into a PBN crucible, and then the loaded PBN crucible is loaded into a quartz tube and sealed with a quartz cap. [0004] The inventors found that using the above-mentioned sealing material is inconvenient to operate, and the sealing effect needs to be improved. SUMMARY OF THE INVENTION [0005] In order to make the sealing operation between the quartz tube and the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): F16J15/06F16J15/10F16J15/12C30B29/42C23C4/129C23C4/073C22C19/05C23C4/134C23C4/10C23C4/18
CPCF16J15/061F16J15/068F16J15/102F16J15/108F16J15/122C30B29/42C23C4/129C23C4/073C22C19/058C23C4/134C23C4/10C23C4/18
Inventor 张满
Owner BEIJING TONGMEI XTAL TECH CO LTD
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