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Free layer of MRAM (Magnetic Random Access Memory), preparation method of free layer and magnetic tunnel junction of MRAM

A free, magnetic layer technology, applied in the field of magnetoresistive devices, can solve the problems of reducing the thickness of the magnetic film, Hk reduction, etc., to reduce the interface damage, improve the vertical magnetic anisotropy field, and improve the data retention ability.

Pending Publication Date: 2022-07-01
ZHEJIANG HIKSTOR TECHOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, simply increasing the free layer thickness will lead to H k decrease; while increasing H through the thickness k , will reduce the thickness of the magnetic film

Method used

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  • Free layer of MRAM (Magnetic Random Access Memory), preparation method of free layer and magnetic tunnel junction of MRAM
  • Free layer of MRAM (Magnetic Random Access Memory), preparation method of free layer and magnetic tunnel junction of MRAM
  • Free layer of MRAM (Magnetic Random Access Memory), preparation method of free layer and magnetic tunnel junction of MRAM

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preparation example Construction

[0041] The present invention also provides a preparation method of the free layer described in the above technical solution, comprising the following steps:

[0042] Using magnetron sputtering technology, several layers of magnetic layers and coupling layers are alternately deposited on the barrier layer to form a free layer;

[0043] Wherein, the magnetic layer in contact with the potential barrier layer is deposited and formed under at least two different magnetron sputtering powers, and the magnetron sputtering power on the side near the potential barrier layer is the smallest.

[0044] In the preparation method provided by the present invention, the free layer structure is prepared by layer-by-layer deposition on the barrier layer. Wherein, the deposition method is magnetron sputtering, the magnetic layer in contact with the barrier layer is deposited and formed under at least two different magnetron sputtering powers, and the magnetron sputtering power on the side near th...

Embodiment 1

[0049] Using magnetron sputtering technology, deposit Co-Fe-B alloy layer 1, Co-Fe-B alloy layer 2, coupling layer, Co-Fe-B alloy layer 3, Co-Fe-B alloy layer on the barrier layer in sequence Layer 4 and overlay.

[0050] Among them, the material of the barrier layer is MgO, the thickness is 2nm, the deposition power of the Co-Fe-B alloy layer 1 is 30W, the deposition thickness is 0.3nm, the deposition power of the Co-Fe-B alloy layer 2 is 300W, and the deposition thickness is 300W. is 1.2nm, the material of the coupling layer is Ta, the thickness is 0.4nm, the deposition power of Co-Fe-B alloy layer 3 is 500W, the deposition thickness is 0.8nm, the deposition power of Co-Fe-B alloy layer 4 is 500W, The deposition thickness is 0.2 nm, and the material of the cover layer is MgO with a thickness of 1.0 nm. The final free layer structure is as figure 2 shown, figure 2 It is a schematic diagram of the structure of the free layer provided in Embodiment 1 of the present inventi...

Embodiment 2

[0061] Using magnetron sputtering technology, deposit Co-Fe-B alloy layer 1, Co-Fe-B alloy layer 2, coupling layer 1, Co-Fe-B alloy layer 3, Co-Fe-B on the barrier layer in sequence Alloy layer 4, coupling layer 2, Co-Fe-B alloy layer 5, Co-Fe-B alloy layer 6, coupling layer 3, Co-Fe-B alloy layer 7, Co-Fe-B alloy layer 8 and cover layer .

[0062] Among them, the material of the barrier layer is MgO, the thickness is 2.0nm, the deposition power of the Co-Fe-B alloy layer 1 is 30W, the deposition thickness is 0.3nm, the deposition power of the Co-Fe-B alloy layer 2 is 300W, and the deposition power is 300W. The thickness is 1.2nm, the material of coupling layer 1 is Ta, the thickness is 0.3nm, the deposition power of Co-Fe-B alloy layer 3 is 500W, the deposition thickness is 0.8nm, and the deposition power of Co-Fe-B alloy layer 4 is 50W, the deposition thickness is 0.2nm, the material of the coupling layer 2 is MgO, the thickness is 0.7nm, the deposition power of the Co-Fe-B...

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Abstract

The invention belongs to the technical field of magnetoresistive devices, and particularly relates to a free layer of an MRAM (Magnetic Random Access Memory), a preparation method of the free layer and a magnetic tunnel junction of the MRAM. The free layer provided by the invention is arranged on a barrier layer and comprises at least two magnetic layers, and a coupling layer is arranged between the adjacent magnetic layers; each magnetic layer is formed by magnetron sputtering deposition; the magnetic layer in contact with the barrier layer is formed by deposition under at least two different magnetron sputtering powers, and the magnetron sputtering power on one side close to the barrier layer is minimum. On the basis of a traditional free layer structure, by reducing the deposition power of the magnetic layer close to the barrier layer, under the condition that the thickness of the magnetic layer is kept unchanged, the vertical magnetic anisotropy field (Hk) of the free layer can be greatly improved, interface damage is reduced, and the data retention of the MRAM is improved.

Description

technical field [0001] The invention belongs to the technical field of magnetoresistive devices, and in particular relates to a free layer of an MRAM and a preparation method thereof and a magnetic tunnel junction of the MRAM. Background technique [0002] Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM for short) has the advantages of simple circuit design, fast read and write speed, and non-volatility. Its basic structure is a magnetic tunnel junction (MTJ), which consists of a free layer, a reference layer, and a barrier layer sandwiched between them. Among them, the magnetization direction of the reference layer is fixed and does not flip during the operation of the device; the magnetization direction of the free layer is collinear (parallel or anti-parallel) with the reference layer. By using the spin torque of electrons, the magnetization direction of the free layer is reversed, so that the magnetization direction of the reference layer and the free layer...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/12H01L43/10C23C14/08C23C14/16C23C14/35
CPCC23C14/165C23C14/081C23C14/35H10N50/01H10N50/85H10N50/10
Inventor 孙一慧孟凡涛简红宫俊录
Owner ZHEJIANG HIKSTOR TECHOGY CO LTD
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