Optoelectronic device
A photoelectric device, quantum dot light emitting technology, applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problem that it is difficult to improve the photoelectric efficiency and life performance of QLED devices at the same time
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[0191] The preparation of the optoelectronic device in the embodiment of the present application includes the steps:
[0192] S10. Obtain the substrate on which the anode is deposited;
[0193] S20. A hole injection layer is grown on the surface of the anode;
[0194] S30. Growing a hole transport layer on the surface of the hole injection layer;
[0195] S40. Then deposit a quantum dot light-emitting layer on the hole transport layer;
[0196] S50. Finally, an electron transport layer is deposited on the quantum dot light-emitting layer, and a cathode electrode is evaporated on the electron transport layer to obtain an optoelectronic device.
[0197] Specifically, in step S10, the ITO substrate needs to undergo a pretreatment process, and the steps include: cleaning the ITO conductive glass with a cleaning agent to preliminarily remove the stains on the surface, and then sequentially rinsing the ITO conductive glass in deionized water, acetone, anhydrous ethanol, and deioni...
Embodiment 1～7
[0213] In order to verify the influence of the hole injection barrier between the outer shell layer material of the quantum dot material and the hole transport material on the device performance, this application sets up Examples 1 to 7. The effect of hole injection barrier on performance such as device lifetime.
[0214] The two kinds of quantum dots used in Examples 1 to 7 of the present application are: blue QD1 whose outer shell is CdZnS (the inner core is CdZnSe, the middle shell is ZnSe, the outer shell thickness is 1.5 nm, and the top energy level of the valence band is -6.2 eV) , blue QD2 with ZnS outer shell (the inner core is CdZnSe, the middle shell is ZnSe, the ZnS shell thickness is 0.3 nm, and the top energy level of the valence band is 6.5 eV). The blue QD3 with the outer shell of ZnSeS (the inner core of CdZnSe and the middle shell of ZnSe) hole transport materials are P9 (E HOMO : 5.1eV), P15(E HOMO : 5.8eV), the hole injection layer adopts PEDOT:PSS (E HOM...
Embodiment 8～11
[0220] Further, in order to verify the influence of the interface energy level barrier between HIL and HTL on device performance, this application sets up Examples 8 to 11, and illustrates ΔE through the comparison of different HTL and HTL combinations. HTL-HIL The effect of hole injection barrier on device life and other properties.
[0221] In Examples 8 to 9 of the present application, blue quantum dots whose outer shell is ZnS (the inner core is CdZnSe, the middle shell is ZnSe, the outer shell thickness is 0.3 nm, and the top energy level of the valence band is 6.5 eV) are used, and in Examples 10 to 11 The red quantum dots with the outer shell of ZnS (the core is CdZnSe, the middle shell is ZnSe, the shell thickness is 0.3 nm, the top energy level of the valence band is 6.5 eV), and the hole transport materials are P9 (E HOMO : 5.5eV), P11(E HOMO : 5.5eV), P13 (E HOMO : 4.9eV), the hole injection layer adopts PEDOT:PSS (E HOMO : 5.1eV) and HIL2 (work function: 5.6eV),...
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