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ZnO-based composite material, preparation method thereof and QLED device

A composite material and amine-based technology, which is applied in the field of QLED devices, ZnO-based composite materials and their preparation, can solve the problems of increasing interface complexity, high electron transmission rate, and small transmission barrier, so as to improve external quantum efficiency and use Lifetime, suppression of fluorescence quenching effects, and reduction of non-radiative recombination effects

Active Publication Date: 2022-04-08
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are also some problems in the ZnO electron transport layer: on the one hand, the transport barrier between ZnO and quantum dots is small, and the electron transport rate is higher than the hole transport rate, resulting in unbalanced carrier injection, which makes the quantum dots negatively charged. Non-radiative Auger recombination is caused; on the other hand, too many defect states on the surface of ZnO nanocrystals can easily cause the fluorescence quenching of quantum dots
However, a large number of literatures prove that the above two methods have their limitations: 1) ion-doped ZnO nanocrystals used as electron transport layer will lead to a more obvious efficiency roll-off of QLED, affecting the brightness of the device; 2) the introduction of inert intercalation increases the The complexity of the interface makes device construction and performance regulation more difficult

Method used

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  • ZnO-based composite material, preparation method thereof and QLED device
  • ZnO-based composite material, preparation method thereof and QLED device
  • ZnO-based composite material, preparation method thereof and QLED device

Examples

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preparation example Construction

[0052] In the present invention, the source of the ZnO nanoparticles is not particularly limited, and the ZnO nanoparticles can be prepared by a method well known to those skilled in the art. In the present invention, the preparation method of the ZnO nanoparticles preferably includes:

[0053] The soluble zinc salt solution is mixed with the alkali solution for hydrolysis reaction to obtain ZnO nanoparticles.

[0054] In the present invention, the solute of the soluble zinc salt solution is preferably one or more of zinc sulfate, zinc chloride, zinc nitrate, zinc acetate, zinc acetylacetonate and zinc gluconate.

[0055] In the present invention, the solvent of the soluble zinc salt solution is preferably water, ethanol, methanol, propanol, isopropanol, acetone, dimethyl sulfoxide, tetrahydrofuran, dimethylformamide, methyl acetate, ethyl acetate One or more of esters, propyl acetate, chlorobenzene and acetonitrile.

[0056] In the present invention, the concentration of th...

Embodiment 1

[0093] A ZnO-based composite material consisting of ZnO nanoparticles and SiO coated on the surface of the ZnO nanoparticles in turn 2 Coating layer and amine-modified SiO 2 cladding composition; the SiO 2 Coating layer and amine-modified SiO 2 The mass ratio of the coating layer is 1:1.

[0094] Among them, ZnO nanoparticles and SiO 2 The mass ratio of the cladding layer is 100:1.5; SiO 2 Coating layer and amine-modified SiO 2 The overall average thickness of the cladding layer is ~0.9 nm; the average particle size of the ZnO-based composite is 4.4 nm.

[0095] The ZnO nanoparticles used in this example were prepared by the following preparation method: dissolving zinc acetate in dimethyl sulfoxide to obtain a zinc acetate solution with a concentration of 0.1M, and dissolving tetramethylammonium hydroxide in absolute ethanol , to obtain a tetramethylammonium hydroxide solution with a concentration of 0.45M, the above two solutions were mixed under stirring conditions fo...

Embodiment 2

[0109] A ZnO-based composite material consisting of ZnO nanoparticles and SiO coated on the surface of the ZnO nanoparticles in turn 2 Coating layer and amine-modified SiO 2 cladding composition; the SiO 2 Coating layer and amine-modified SiO 2 The mass ratio of the coating layer is 3:1.

[0110] Among them, ZnO nanoparticles and SiO 2 The mass ratio of the cladding layer is 100:4.5; SiO 2 Coating layer and amine-modified SiO 2 The total average thickness of the cladding layer is 1.4nm; the average particle size of the ZnO-based composite material is 4.9nm.

[0111] The ZnO nanoparticles used in this example are the same as those in Example 1.

[0112] The preparation method of the above-mentioned ZnO-based composite material comprises the following steps:

[0113] (1) Mix ZnO nanoparticles (240mg) with solvent (40mL) (a mixture of absolute ethanol and dimethyl sulfoxide with a mass ratio of 1:5) and silicon source (ethyl orthosilicate, 10.8mg) carry out hydrolysis rea...

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Abstract

The invention provides a ZnO-based composite material, a preparation method thereof and a QLED device, and belongs to the technical field of photoelectric materials. The resistance of the ZnO-based composite layer material provided by the invention is higher than that of ZnO, so that the electron mobility of the electron transport layer is reduced, the electron injection and transport efficiency is reduced, and the electron injection capability of the ZnO layer is effectively regulated and controlled; wherein the NH2-end cap of the amino-modified SiO2 coating layer can form a dipole layer on the interface of the light-emitting layer / electron transport layer, form a reverse electric field between the interfaces, change the electron injection mode, further regulate and control the electron transport of the interfaces, enable the charge injection of the QLED to approach to complete balance, and reduce non-radiative recombination caused by unbalanced carrier injection; the SiO2 shell layer isolates the direct contact between ZnO and the quantum dots, effectively weakens the fluorescence quenching of the quantum dots caused by the defect state of the ZnO surface, and finally improves the external quantum efficiency and prolongs the service life of the QLED device.

Description

technical field [0001] The invention relates to the technical field of photoelectric materials, in particular to a ZnO-based composite material, a preparation method thereof, and a QLED device. Background technique [0002] Colloidal quantum dots (QDs) have attracted extensive attention due to their broad absorption peaks, narrow emission peaks, continuously tunable emission wavelengths over the entire visible region, and excellent photoluminescence quantum yields (PLQY). This also determines that quantum dot light-emitting diodes (Quantum Dot Light Emitting Diodes, QLEDs) with quantum dots as light-emitting materials have the advantages of high color purity and high luminous efficiency, making them a successor to traditional light-emitting diodes (Light Emitting Diodes, LED) and organic light-emitting diodes. The most promising next-generation lighting display technology after Organic Light-Emitting Diode (OLED). [0003] At present, it is believed that the main factors af...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
Inventor 杜祖亮王书杰张肖月方岩
Owner HENAN UNIVERSITY
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