Flexible substrate light-emitting diode chip capable of improving heat dissipation performance and preparation method of flexible substrate light-emitting diode chip

Abstract

The invention discloses a flexible substrate light-emitting diode chip capable of improving heat dissipation and a preparation method thereof, and belongs to the field of light-emitting diode manufacturing. In the light-emitting diode chip, a polyethylene naphthalate flexible substrate comprises a flexible main body and a plurality of folding bulges which are stacked on the flexible main body at intervals, and the folding bulges are prismatic tables of which the axes are vertical to the surface of the flexible main body. The folding protrusions deform to release force, and the flexibility of the light-emitting diode chip is improved. The indium zinc oxide transparent conductive layer on the polyethylene naphthalate flexible substrate is provided with conductive protrusions in one-to-one correspondence with the folding protrusions, and the conductive effect is improved. The Cu heat dissipation layer on the indium zinc oxide transparent conductive layer fills and levels up the recess of the pattern, so that the heat dissipation effect of the Cu heat dissipation layer is improved. The heat dissipation effect and the conductive effect of the finally obtained light-emitting diode chip are improved, and the service life of the finally obtained light-emitting diode chip is prolonged.

Description

technical field [0001] The invention relates to the field of light-emitting diode fabrication, in particular to a flexible substrate light-emitting diode chip with improved heat dissipation and a preparation method thereof. Background technique [0002] A light-emitting diode is a semiconductor electronic component that emits light. As a new type of high-efficiency, environmentally friendly and green solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, display screens, etc. the goal that is pursued. [0003] The vertical structure light-emitting diode is often used in the light-emitting of the display screen, and the vertical structure light-emitting diode chip is the basic structure for preparing the light-emitting diode. Metal contact layer, n-type layer, light-emitting layer, p-type layer and p-type metal contact layer. [0004] The substrates used ...

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Problems solved by technology

[0004] The substrate selected for the light-emitting diode chip is usually a sapphire substrate, a gallium arsenide substrate or a gallium nitride substrate. The sapphire substrate, gallium arsenide substrate or gallium nitride substrate itself is relatively rigid and has a fixed shape. Meet the use requirements of some flexible displays; even if a certain flexible substrate is selected as the growth basis of the LED epitaxial wafer, it is difficult to ensure the growth on the substrate under the premise that the volume of the LED chip used in the display is very small. The epitaxial material has fewer defects and can have good heat dissipation performance, resulting in a shorter lifetime of the resulting LED chip

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