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Silicon carbide semiconductor device, power conversion device, and method for manufacturing silicon carbide semiconductor device

A silicon carbide and semiconductor technology, used in semiconductor devices, high-efficiency power electronic conversion, circuits, etc., can solve problems such as concentration and deterioration of semiconductor device withstand voltage, and achieve the effect of reducing JFET resistance and high withstand voltage.

Pending Publication Date: 2022-07-08
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in such a structure, there is a problem that the electric field concentrates on the lower part of the protective layer and the lower part of the connection layer, and the withstand voltage of the semiconductor device deteriorates.

Method used

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  • Silicon carbide semiconductor device, power conversion device, and method for manufacturing silicon carbide semiconductor device
  • Silicon carbide semiconductor device, power conversion device, and method for manufacturing silicon carbide semiconductor device
  • Silicon carbide semiconductor device, power conversion device, and method for manufacturing silicon carbide semiconductor device

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Embodiment approach 1

[0045] use Figure 1 to Figure 16 The silicon carbide semiconductor device of Embodiment 1 will be described.

[0046] First, use figure 1 The structure of the silicon carbide semiconductor device 100 will be described. figure 1 It is a cross-sectional view showing the silicon carbide semiconductor device 100 of the present embodiment.

[0047] Furthermore, in this disclosure, reference is made to figure 1 , the source electrode 12 side of the silicon carbide semiconductor device 100 with respect to the substrate 1 is defined as "upper", and the drain electrode 13 side with respect to the substrate 1 is defined as "lower".

[0048] like figure 1As shown, the silicon carbide semiconductor device 100 includes a substrate 1 , a gate electrode 11 , a source electrode 12 , a drain electrode 13 , an interlayer insulating film 14 , and a semiconductor layer 15 . The semiconductor layer 15 is provided on the upper side of the substrate 1 , and the drain electrode 13 is provided o...

Embodiment approach 2

[0128] use Figure 26 The silicon carbide semiconductor device of Embodiment 2 will be described. Figure 26 It is a cross-sectional view showing the silicon carbide semiconductor device 200 of the present embodiment.

[0129] The silicon carbide semiconductor device 200 is different from the silicon carbide semiconductor device 100 of the first embodiment in the structure of the protective layer 7 and the manufacturing method thereof. The other structures and manufacturing methods of the silicon carbide semiconductor device 200 are the same as those of the silicon carbide semiconductor device 100 , so the description is omitted.

[0130] like Figure 26 As shown, in the silicon carbide semiconductor device 200, the second-conductivity-type protective layer 7 provided below the trench 6 includes a first protective layer 7a with a high impurity concentration and a first protective layer 7a provided below the first protective layer 7a with an impurity concentration The second...

Embodiment approach 3

[0141] use Figure 27 The silicon carbide semiconductor device of the third embodiment will be described. Figure 27 It is a cross-sectional view showing the silicon carbide semiconductor device 300 of the present embodiment.

[0142] The silicon carbide semiconductor device 300 differs from the silicon carbide semiconductor device 100 of the first embodiment in the structures of the connection layer 8 and the electric field relaxation layer 9 and the manufacturing method thereof. The other structures and manufacturing methods of the silicon carbide semiconductor device 300 are the same as those of the silicon carbide semiconductor device 100 , so the description is omitted.

[0143] like Figure 27 As shown, in the silicon carbide semiconductor device 300 , the electric field relaxation layer 9 is provided so as to be in contact with the bottom surface of the connection layer 8 and the bottom surface of the protective layer 7 . That is, the electric field relaxation layer ...

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Abstract

Provided is a silicon carbide semiconductor device having high withstand voltage and capable of reducing on-resistance. A silicon carbide semiconductor device (100) is provided with: a substrate (1) of a first conductivity type; a drift layer (2) of a first conductivity type, which is provided on the substrate (1), and which is composed of silicon carbide; a second conductivity-type body region (3) provided on the drift layer (2); a source region (5) of the first conductivity type provided on the body region (3); a source electrode (12) connected to the source region (5); a gate insulating film (10) provided on the inner surface of the trench (6); a gate electrode (11) provided within the drift layer (2) via a gate insulating film (10); a second conductivity type protective layer (7) provided below the gate insulating film (10); a second conductivity-type connection layer (8) in contact with the protective layer (7) and the body region (3); and an electric field relaxation layer (9) of a second conductivity type, which is provided below the connection layer (8) than the bottom surface of the connection layer (8), and which has a lower impurity concentration of the second conductivity type than the connection layer (8).

Description

technical field [0001] The present disclosure relates to a trench gate type silicon carbide semiconductor device, a power conversion device to which the silicon carbide semiconductor device is applied, and a method for manufacturing the silicon carbide semiconductor device. Background technique [0002] As power switching elements, insulated gate semiconductor devices such as MOSFET (Metal Oxide Semiconductor FieldEffect Transistor) and IGBT (Insulated Gate Bipolar Transistor) are widely used. Among the insulated gate type semiconductor devices, semiconductor devices using silicon carbide (SiC) (hereinafter referred to as "silicon carbide semiconductor devices") have attracted attention, and development of trench gate type silicon carbide semiconductor devices has also been advanced. [0003] In the trench gate type semiconductor device, when a high voltage is applied in the OFF state of the semiconductor device, it is a problem that electric field concentration occurs at th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78
CPCH01L29/7813H01L29/0623H01L29/1095H01L29/4238H01L29/0696H01L29/66068H01L29/1608H01L21/047H01L29/0878H01L21/0465H02M7/53871
Inventor 田中梨菜福井裕八田英之足立亘平
Owner MITSUBISHI ELECTRIC CORP
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