Method for realizing polymorphic storage based on CrOCl material

A multi-state storage and graphite material technology, applied in the field of spintronics, can solve difficult problems and achieve the effect of low cleavage energy and good air stability

Pending Publication Date: 2022-07-12
PEKING UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the zero magnetic moment of antiferromagnetic materials also causes great difficulties in the writing of its information. It is difficult to realize effective methods such as spin transfer torque and spin orbit torque in ferromagnetic materials. magnetic moment reversal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for realizing polymorphic storage based on CrOCl material
  • Method for realizing polymorphic storage based on CrOCl material
  • Method for realizing polymorphic storage based on CrOCl material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Below in conjunction with the accompanying drawings, the present invention will be further described through specific embodiments.

[0024] In this example, a 10nm CrOCl tunneling device is used to prove that the memory device has the advantages of stability, high efficiency, and continuous control of the resistance state:

[0025] (1) Preparation of the device. The two-dimensional layered hBN material with a thickness of 10-50 nm, a graphite material with a thickness of 1-3 nm, and a CrOCl material with a thickness of less than 20 nm were obtained by mechanical exfoliation method. on Si-SiO 2 On the substrate, the tunneling junction device is prepared through the steps of electron beam exposure, reactive ion etching, electron beam evaporation and the like. Optical photos of CrOCl tunneling junction devices such as figure 1 shown.

[0026] (2) Measure the change of the tunneling current with the magnetic field, such as figure 2 , the magnetic phase transition occu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for realizing polymorphic storage based on a CrOCl material. By using the magnetoelectric coupling effect in the two-dimensional antiferromagnetic insulator CrOCl, the metastable state in the CrOCl magnetic phase change process is regulated and controlled by applying a voltage pulse to the tunnel junction, so that the resistance state of the tunnel junction is controllably and randomly switched within a certain range. The resistance state of the tunneling junction is determined by changing the voltage scanning speed and amplitude, information stored in the tunneling junction can be erased by scanning the magnetic field, one-bit decimal data can be stored in a single device, and the device has the advantages of being ultra-small in size and ultra-high in performance and has the potential of large-scale application.

Description

technical field [0001] The invention relates to the field of spintronics, in particular to a method for applying a specific electric field in a two-dimensional magnetic material CrOCl tunneling junction, thereby changing the magnetization state and tunneling resistance of the tunneling junction. Background technique [0002] Traditional spintronics is based on ferromagnetic materials and their giant magnetoresistance effect. The direction of spin polarization of ferromagnetic materials is measured and regulated by external magnetic fields, electric fields, etc., so as to realize data storage, calculation and transmission. For the vast majority of ferromagnetic materials, the polarization states in the two directions along the easy axis are degenerate in energy, and the transition between these two states requires overcoming the magnetic anisotropy energy, thus requiring The energy of a certain electric field or magnetic field drives it to flip, which constitutes two states o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16H01L43/08H01L43/10H01L43/12
CPCG11C11/16H10N50/85H10N50/01H10N50/10
Inventor 谷平凡叶堉
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap