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Equipment and method for preparing crystals

An equipment and crystal technology, applied in the field of crystal growth equipment, can solve problems such as the inability to meet the temperature gradient, and achieve the effect of increasing the height of the temperature field and increasing the effective space

Pending Publication Date: 2022-07-15
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide an equipment and method for preparing crystals, aiming to solve the problem that the temperature gradient of the equipment for preparing crystals in the related art is not suitable for crystal growth.

Method used

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  • Equipment and method for preparing crystals
  • Equipment and method for preparing crystals
  • Equipment and method for preparing crystals

Examples

Experimental program
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Effect test

Embodiment 1

[0033] see figure 1 and figure 2In this embodiment, a device for preparing crystals includes: a device body, a heat source fixed to the device body, a growth chamber 1 fixed to the device body and located in the heat source, and a growth chamber 1 fixed to the growth chamber 1 and located between the heat source and the growth chamber There are at least two layers of temperature-regulating element sets 2 between 1 and 1. The growth chamber 1 has a accommodating cavity 11 for accommodating the source material. One end of the temperature-regulating element 21 of the temperature-regulating element group 2 is fixed to the growth chamber 1, and the other end is set apart from the heat source. , the lengths of the temperature regulating members 21 of the same layer of the temperature regulating member group 2 are equal, and the lengths of the temperature regulating members 21 are distributed in a gradient along the length extension direction of the accommodating cavity 11, and the ...

Embodiment 2

[0054] see Image 6 , a method for preparing crystals, applied to the above-mentioned equipment for preparing crystals, including:

[0055] Step S100 , according to the corresponding relationship between the length of the temperature regulating member and the temperature of the growth chamber, set at least two layers of temperature regulating member groups on the growth chamber in a gradient distribution along the lengthwise extending direction of the accommodating cavity.

[0056] Specifically, the lengths of the temperature adjustment elements of the same layer of temperature adjustment element groups are equal, and the lengths of the temperature adjustment elements of the adjacent temperature adjustment element groups are not equal. The longer the length of the temperature adjustment elements of the temperature adjustment element group, the corresponding The stronger the heat absorption capacity of the position, the higher the temperature of the corresponding position of th...

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Abstract

The invention provides equipment and a method for preparing crystals, and the equipment comprises an equipment main body, a heat source fixed on the equipment main body, a growth chamber fixed on the equipment main body and located in the heat source, and at least two layers of temperature adjusting piece groups fixed on the growth chamber and located between the heat source and the growth chamber, one end of each temperature adjusting piece of the temperature adjusting piece group is fixed in the growth chamber, the other end of each temperature adjusting piece is arranged at an interval of the heat source, the lengths of the temperature adjusting pieces of the temperature adjusting piece groups on the same layer are equal, the lengths of the temperature adjusting pieces of the temperature adjusting piece groups on adjacent layers are not equal, and heat generated by the heat source is conducted to the temperature adjusting pieces and conducted to the growth chamber by the temperature adjusting pieces. The lengths of the temperature adjusting pieces of the same layer of temperature adjusting piece group are equal, and the lengths of the temperature adjusting pieces of the adjacent layers of temperature adjusting piece groups are not equal, so that the temperature distribution of the temperature field of the growth chamber can be changed by adjusting the lengths of the temperature adjusting pieces, and the growth chamber can provide a temperature gradient suitable for crystal growth.

Description

technical field [0001] The invention belongs to the technical field of crystal growth equipment, and particularly relates to a device and method for preparing crystals. Background technique [0002] Aluminum nitride has an ultra-wide bandgap (6.2eV), high breakdown field strength (11.7*106V·cm -1 ), high thermal conductivity (measured value 3.16W·cm -1 ·K -1 ), radiation resistance, acid and alkali resistance and high stability and other excellent properties, can be used for the preparation of deep ultraviolet LED, LD, high-power electronics and nuclear reactor vibration detection and other devices. In addition, aluminum nitride (AlN) has small lattice mismatch and thermal mismatch with gallium nitride (GaN) and aluminum gallium nitride (AlGaN), and is an ideal substrate material for GaN and AlGaN as functional layer devices. Therefore, the preparation of AlN single crystal is of great significance for the preparation of optoelectronic and electronic devices. At present,...

Claims

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Application Information

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IPC IPC(8): C30B23/00C30B29/40
CPCC30B23/00C30B23/002C30B29/403Y02P70/50
Inventor 覃佐燕武红磊李文良金雷
Owner SHENZHEN UNIV
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