Vertical cavity surface emitting laser and preparation method thereof

Abstract

The invention discloses a vertical cavity surface emitting laser, which comprises an active region platform, the active region platform comprises an oxide layer and a P-type electrode which are respectively positioned at the lower part and the top of the active region platform, and the oxide layer comprises an oxidation limiting layer and an oxidation hole surrounded by the oxidation limiting layer; at least one electrical channel is arranged in the active region platform, and the electrical channel starts from the P-type electrode and extends to the oxidation limiting layer. The invention also discloses a preparation method of the vertical cavity surface emitting laser. Compared with the prior art, the method has larger data transmission bandwidth and data transmission rate.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a vertical cavity surface emitting laser (Vertical-Cavity Surface-Emitting Laser, VCSEL for short) and a preparation method thereof. Background technique [0002] Vertical-cavity surface-emitting lasers (VCSELs) have great advantages over edge-emitting lasers in terms of high-density integration and fiber coupling, so they have great application prospects in optical communications and other fields. However, due to the defects of the device structure, such as thin active region, short cavity length, and small monolayer gain, in order to improve its effective photon confinement capability, the oxidation confinement structure is basically adopted at present. Oxidation-confined structures can reduce the lifetime of non-radiative recombination centers in the material and form an effective confinement on the current injected into the active region. [0003] The main proce...

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Problems solved by technology

[0004] For VCSEL with oxidation-limited structure, a larger drive current can increase the data transmission bandwidth and data transmission rate capability of the laser, but due to the high resistance value of the DBR layer, the large current during operation is transmitted to the quantum well through the DBR The Joule heating effect in the active layer process is significant, and a large amount of Joule heat will be generated, causing the temperature of the laser to rise rapidly. The internal quantum efficiency of the quantum well semiconductor material decreases rapidly with the increase of the temperature of the laser, which reduces the optical output power of the laser. Thus seriously affecting the data transmission bandwidth and data transmission rate of the laser

At the same time, the DBR layer between the P-type electrode and the N-type electrode itself has a large capacitance value, and the large parasitic capacitance will also affect the improvement of the data transmission bandwidth and data transmission rate of the laser.

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