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Monolithic integrated photoelectric coupler based on Schottky MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and preparation method thereof

An optocoupler and integrated technology, applied in the field of integrated optoelectronics, achieves the effect of shallow junction, lower production cost, and less obvious short channel effect

Active Publication Date: 2022-07-26
SHANGHAI NATLINEAR ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of monolithic integrated optocoupler and preparation method based on Schottky MOSFET, for solving the problem of monolithic integrated optoelectronic devices and electronic devices in the prior art. Problems of device fabrication monolithic integrated optocoupler

Method used

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  • Monolithic integrated photoelectric coupler based on Schottky MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and preparation method thereof
  • Monolithic integrated photoelectric coupler based on Schottky MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and preparation method thereof
  • Monolithic integrated photoelectric coupler based on Schottky MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and preparation method thereof

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Embodiment Construction

[0053] The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0054] When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional views showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the protection scope of the present invention. In addition, the three-dimensional spatial dimensions of length, width and depth should be included i...

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Abstract

According to the monolithic integrated photoelectric coupler based on the Schottky MOSFET and the preparation method of the monolithic integrated photoelectric coupler, a Schottky MOSFET peripheral circuit and a photon integrated circuit are prepared on the same semiconductor substrate, emission and detection of visible light in the photon integrated circuit are controlled through the peripheral circuit, a complete signal in-chip transmission function is achieved, and the photoelectric coupler has the advantages of being simple in structure, low in cost and high in reliability. High-performance photoelectric devices and electronic devices can be prepared at the same time; the silicon-based substrate can be processed by utilizing a mature MEMS (Micro Electro Mechanical System) process line, so that the method has important significance on batch production and reduction of production cost; the Schottky MOSFET is small in gate leakage current, shallow in junction depth of a source drain region, small in junction capacitance and not obvious in short channel effect, and is easy to replace an existing silicon-based MOSFET to realize transplantation of an integrated circuit; the preparation of the Schottky MOSFET does not need a complex ion implantation technology, the growth of an epitaxial material does not need to be introduced in the processing process, meanwhile, the Schottky MOSFET can be completely compatible with the preparation process of a photon integrated circuit, and the processing difficulty of a monolithic optoelectronic integrated circuit is reduced.

Description

technical field [0001] The invention belongs to the technical field of integrated optoelectronics, and relates to a monolithic integrated optocoupler based on Schottky MOSFET and a preparation method thereof. Background technique [0002] Optoelectronic monolithic integration refers to the use of optoelectronic technology and microelectronics technology to integrate optoelectronic devices and electronic components on the same substrate, which is one of the current research hotspots. Compared with traditional off-chip interconnection, optoelectronic monolithic integration has the advantages of small area, high reliability, low noise, fast speed and strong anti-interference ability. Therefore, optoelectronic monolithic integration is the future development trend of optocouplers. [0003] An optocoupler is a device formed by encapsulating a light-emitting device, a photodetector, and a circuit. When the electrical signal acts on the light-emitting device, the light-emitting de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81C3/00B81B7/00B81B7/02
CPCB81C1/00015B81C3/001B81B7/02B81B7/008B81C1/00246B81C1/00238B81B2201/04Y02P70/50
Inventor 刘桂芝马丙乾
Owner SHANGHAI NATLINEAR ELECTRONICS CO LTD
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