Schottky diode with junction termination extension structure and preparation method thereof
A Schottky diode and junction terminal extension technology, applied in the field of microelectronics, can solve the problems of difficult preparation and limited electric field adjustment, and achieve the effects of excellent quality, smooth equipotential profile, and reduction of forward on-resistance
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Embodiment 1
[0036] See figure 1 , figure 1 It is a schematic structural diagram of a Schottky diode with a junction terminal extension structure provided by an embodiment of the present invention, which sequentially includes from bottom to top: including: cathodes 1, n + -Ga 2 O 3 Substrate layer 2, n - -Ga 2 O 3 Buffer layer 3, P-type region 4, anode 5; wherein,
[0037] The cathodes 1, n + -Ga 2 O 3 Substrate layer 2, n - -Ga 2 O 3 The buffer layer 3 is arranged sequentially from bottom to top;
[0038] the n - -Ga2 O 3 The left and right ends of the buffer layer 3 are respectively provided with a set of groove structures, and the p-type region 4 covers the n in the groove structure and above the groove structure. - -Ga 2 O 3 the surface of the buffer layer 3 to form a junction terminal extension structure;
[0039] The anode 5 covers the n - -Ga 2 O 3 The upper surface in the middle of the buffer layer 3 extends toward both ends to cover part of the upper surface o...
Embodiment 2
[0055] On the basis of the above-mentioned first embodiment, this embodiment provides a method for fabricating a Schottky diode with a junction terminal extension structure. See figure 2 , figure 2 This is a schematic flowchart of a method for fabricating a Schottky diode with a junction terminal extension structure provided by an embodiment of the present invention.
[0056] S1: choose n + -Ga 2 O 3 substrate and cleaning.
[0057] Specifically, the doping ions can be selected as Si ions or Sn ions, and the doping concentration is 1×10 18 ~1×10 20 cm -3 , n with a thickness of 300 to 650 μm + -Ga 2 O 3 material as substrate material. Refer to the existing standard cleaning methods for this n + -Ga 2 O 3 The substrate is cleaned, and the specific cleaning process is not described in detail in this embodiment.
[0058] S2: at n + -Ga 2 O 3 Substrate side epitaxial growth of low-doped n - -Ga 2 O 3 The buffer layer.
[0059] Specifically, the MOCVD method...
Embodiment 3
[0078] On the basis of the second embodiment above, and with reference to the accompanying drawings, the preparation process of the present invention is described in detail by taking the preparation of a Schottky diode with three rectangular trenches on the left and right sides as an example. See Figures 3a-3h , Figures 3a-3h It is a process diagram of preparing a Schottky diode with three rectangular trenches on the left and right sides provided by the embodiment of the present invention, which specifically includes:
[0079] Step 1: Choose n + -Ga 2 O 3 substrate and cleaning.
[0080] Step 2: in n + -Ga 2 O 3 Substrate side epitaxial growth of low-doped n - -Ga 2 O 3 The buffer layer.
[0081] Specifically, the cleaned n + -Ga 2 O 3 The substrate was placed in a MOCVD apparatus with a flow rate of 3.0×10 in trimethylgallium TMGa -6 ~8.0×10 -6 mol / min, O 2 Flow is 1.5×10 -2 ~3.0×10 -2 mol / min, the temperature is 70~90℃, and the pressure is 500Pa under th...
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Abstract
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