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Heterojunction cell efficiency improving method

A technology of heterojunction cells and efficiency, applied in cleaning methods and utensils, chemical instruments and methods, circuits, etc., can solve problems such as surface contamination of silicon wafers, and achieve the effect of wide working pressure

Pending Publication Date: 2022-07-29
SUZHOU MAXWELL TECH CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of this, the present invention provides a method for improving the efficiency of heterojunction cells, which can simultaneously solve the problems of pollution, oxidation and water vapor adsorption on the surface of silicon wafers, and realize the improvement of cell conversion efficiency without affecting the working cycle of PVD equipment

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  • Heterojunction cell efficiency improving method
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  • Heterojunction cell efficiency improving method

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Embodiment Construction

[0039] In order to better understand the technical solutions of the present invention, the embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0040] It should be understood that the described embodiments are only some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0041] The terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. As used in the embodiments of the present invention and the appended claims, the singular forms "a," "the," and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. "First," "second," and "third" are merely descript...

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Abstract

The invention provides a method for improving the efficiency of a heterojunction cell, relates to the technical field of heterojunction cells, and can synchronously solve the problems of surface pollution, oxidation and water vapor adsorption of a silicon wafer without influencing the working rhythm of PVD (Physical Vapor Deposition) equipment. The method comprises the steps of texturing and cleaning, amorphous silicon deposition, TCO film preparation and grid line preparation, amorphous silicon surface treatment is added before the TCO film preparation step, the problems of pollution and oxidation possibly existing on the amorphous silicon surface in the heterojunction cell preparation process are solved, and water vapor adsorbed on the surface of a tray is removed; the surface treatment of the amorphous silicon is realized by adopting a planar ICP (Inductively Coupled Plasma) source; specifically, a plurality of coils are arranged at the top of the vacuum side; the coil is connected with an external RF matcher and is used for generating radio frequency magnetic flux, and electrons in the radio frequency magnetic flux are accelerated by a radio frequency electric field inducted by the radio frequency magnetic flux along the axial direction, so that plasma is generated; and a silicon wafer which is to be subjected to surface treatment and is deposited with amorphous silicon is positioned below the coil and sequentially passes through the plasma region according to a preset speed.

Description

technical field [0001] The present invention relates to the technical field of heterojunction cells, in particular to a method for improving the efficiency of heterojunction cells. Background technique [0002] The process flow of the existing heterojunction cell is as follows: figure 1 shown. The main steps include texturing and cleaning, amorphous silicon deposition, TCO film preparation and gate line preparation. [0003] The main problem of the existing heterojunction cell preparation process is: after the deposition of the amorphous silicon and before the deposition of the TCO film, although in order to protect the surface of the amorphous silicon from being affected, most manufacturers have already made the product (after the deposition of the crystalline silicon batteries) are stored in a nitrogen cabinet, but there are still various situations such as transportation and staying in the atmospheric environment, which cannot completely avoid the problems of pollution ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20H01L21/02B08B7/00H01J37/32
CPCH01L31/202H01L21/02068B08B7/00H01J37/321
Inventor 张永胜解传佳武瑞军彭孝龙莫超超
Owner SUZHOU MAXWELL TECH CO LTD