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Memristor based on two-dimensional tellurene doped copper divalent cations and preparation method thereof

A divalent cation, memristor technology, applied in the field of microelectronics, can solve the problems of device uniformity and reliability constraints, and achieve the effects of short preparation cycle, high performance, low energy consumption, and simple and controllable process

Active Publication Date: 2022-07-29
ZHEJIANG LAB
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

High-performance and stable memristors are the premise and basis for comprehensive applications. At present, research on the design and preparation of memristor devices with various materials, structures and scales is being carried out at home and abroad, but the uniformity and reliability of the devices are affected by the materials and Process constraints

Method used

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  • Memristor based on two-dimensional tellurene doped copper divalent cations and preparation method thereof
  • Memristor based on two-dimensional tellurene doped copper divalent cations and preparation method thereof
  • Memristor based on two-dimensional tellurene doped copper divalent cations and preparation method thereof

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preparation example Construction

[0038] A method for preparing a memristor based on two-dimensional tellurene-doped copper divalent cations, comprising the following steps:

[0039] Step S1: Dissolve two-dimensional tellurium nanocrystals with a width of 10-30 microns, a length of 80-120 microns and a thickness of 40-50 nanometers in deionized water with a conductivity of 18.2 MΩ·cm. Two-dimensional tellurene solution with a concentration of 2 mg / mL;

[0040] Step S2: dissolving copper nitrate in ethylene glycol to form a copper nitrate solution with a concentration of 1-10 mg / mL;

[0041] Step S3: adding the copper nitrate solution dropwise to the two-dimensional tellurene solution to form a mixed solution, the volume ratio of the two-dimensional tellurene solution and the copper nitrate solution is 10:1-10:5, and adding dropwise The process is carried out in a hydrothermal environment, and in the process of adding dropwise to the copper nitrate solution, the mixed solution needs to be continuously stirred,...

Embodiment 1

[0045] Step S1: Synthesize single crystal 2D tellurene using the procedure in the literature (Nature Electronics 2018, 1, (4), 228-236), see figure 2Microscopic photo of the obtained two-dimensional tellurene, a two-dimensional morphology with a silver-gray width of 10-30 microns, a length of 80-120 microns and a thickness of 40-50 nanometers was obtained. A two-dimensional tellurene solution with a concentration of 2 mg / mL was formed in deionized water with a rate of 18.2 MΩ·cm;

[0046] Step S2: dissolving copper nitrate in ethylene glycol to form a copper nitrate solution with a concentration of 5 mg / mL;

[0047] Step S3: adding 9ml of copper nitrate solution dropwise to 30ml of two-dimensional tellurene solution in a hydrothermal environment to prepare a mixed solution, and stirring constantly;

[0048] Step S4: Put the mixed solution into a hydrothermal reaction kettle for hydrothermal reaction, the temperature is 200°C, and the reaction time is 1.2 h. After the reactio...

Embodiment 2

[0052] Step S1: Synthesize single-crystal two-dimensional tellurene using the procedure in the literature (Nature Electronics 2018, 1, (4), 228-236), and dissolve the single-crystal two-dimensional tellurene in a decarbonate with a conductivity of 18.2 MΩ·cm. A two-dimensional tellurene solution with a concentration of 2 mg / mL was formed in ionized water;

[0053] Step S2: dissolving copper nitrate in ethylene glycol to form a copper nitrate solution with a concentration of 3 mg / mL;

[0054] Step S3: adding 6ml copper nitrate solution dropwise to 30ml two-dimensional tellurene solution in a hydrothermal environment to prepare a mixed solution, and stirring constantly;

[0055] Step S4: Put the mixed solution into a hydrothermal reaction kettle for hydrothermal reaction, the temperature is 200°C, and the reaction time is 1.5h. After the reaction is completed, after the mixed solution is cooled, deionization with a conductivity of 18.2 MΩ·cm is used. The mixed solution was wash...

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Abstract

The invention discloses a memristor based on two-dimensional tellurene doped with copper divalent cations and a preparation method thereof, the memristor comprises a substrate, the substrate is provided with a memristive layer, and the memristive layer is two-dimensional tellurene doped with copper divalent cations; step S1, preparing a two-dimensional tellurene solution; s2, preparing a copper nitrate solution; s3, dropwise adding the copper nitrate solution into the solution containing the single crystal two-dimensional tellurene to form a mixed solution; s4, preparing a two-dimensional tellurene doped copper divalent cation substrate; and step S5, preparing the memristor based on the two-dimensional tellurene doped copper divalent cations. According to the method, after small-diameter copper ions are doped into two-dimensional elementary substance tellurene crystal lattices in situ, relaxation of telluride covalent bonds and free cations is formed, and the free cations generated in the process form a conductive channel along with control of an external electric field, so that more stable and uniform memristive characteristics of the two-dimensional tellurene micro-nano memristive transistor are realized.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a memristor based on two-dimensional tellurene-doped copper divalent cations and a preparation method thereof. Background technique [0002] The development of "neuromorphic computing" integrating sense, memory and computing is an important way to solve the energy efficiency and speed problems of the current traditional von Leumann computing architecture. Combined with monolithic integration technology, the use of sensors and memristors to further integrate devices that build new physical principles has become a new growth point in this field. High-performance and stable memristors are the premise and basis for comprehensive applications. At present, researches on the design and preparation of memristor devices with various materials, structures and scales are being carried out at home and abroad. Process constraints. On the basis of optimizing the performance of the c...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/8828H10N70/021
Inventor 王一休杨青张亮李凌付翔高兴俊
Owner ZHEJIANG LAB