Mo-Mn metallization method for high-reliability small-size sapphire

A sapphire and metallization technology, which is applied in the field of ceramic metallization, can solve the problems of shrinkage of the metallization layer and uneven coating of the metallization layer, and achieve the effects of improving shrinkage, avoiding paste hanging, and preventing adhesion

Active Publication Date: 2022-08-02
NANJING SANLE GROUP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Purpose of the invention: The present invention aims to solve the defects of uneven coating of the metallized layer and shrinkage of the metallized layer after sintering in the metallization process of the existing small-size sapphire window, and proposes a highly reliable small-size sapphire metallization method, The metallization method can improve the uniformity of the metallization layer of the sapphire sheet, prevent the metallization layer from shrinking, and improve the reliability of the sapphire metallization layer

Method used

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  • Mo-Mn metallization method for high-reliability small-size sapphire
  • Mo-Mn metallization method for high-reliability small-size sapphire
  • Mo-Mn metallization method for high-reliability small-size sapphire

Examples

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Effect test

Embodiment 1

[0081] A highly reliable small size sapphire Mo-Mn metallization method, which comprises the following steps:

[0082] (1) Preparation of metallization paste for screen printing of gemstone chips

[0083] (1.1) get 55 parts of molybdenum powder, 15 parts of corundum micropowder, 18 parts of manganese monoxide, 10 parts of silicon dioxide and 2 parts of calcium carbonate by weight, add dehydrated alcohol, mix ball milling on planetary ball mill for more than 48 hours, Then pour it into a dry enamel tray and wait for the absolute ethanol to evaporate, and then pass the dried mixed powder through a 120-mesh sieve;

[0084] (1.2) get 38 parts of terpineol, 2 parts of ethyl cellulose and 5 parts of polyvinyl alcohol by weight, mix with the powder after the above-mentioned (1.1) sieving, ball mill 96 hours on a planetary ball mill, spare;

[0085] (2) Metallized coating of small sapphire

[0086] (2.1) Design a small-size sapphire metallized screen printing stage to ensure that t...

Embodiment 2

[0102] A highly reliable small size sapphire Mo-Mn metallization method, which comprises the following steps:

[0103] (1) Preparation of metallization paste for screen printing of gemstone chips

[0104] (1.1) get 60 parts of molybdenum powder, 15 parts of corundum micropowder, 16 parts of manganese monoxide, 8 parts of silicon dioxide and 3 parts of calcium carbonate by weight, add dehydrated alcohol, mix ball milling 48 hours on planetary ball mill, then Pour it into a dry enamel tray and wait for the absolute ethanol to evaporate, then pass the dried mixed powder through a 100-mesh sieve;

[0105] (1.2) get 35 parts of terpineol, 6 parts of ethyl cellulose and 4 parts of polyvinyl alcohol by weight, mix with the powder after the above-mentioned (1.1) sieving, ball mill 72 hours on a planetary ball mill, spare;

[0106] (2) Metallized coating of small sapphire

[0107] (2.1) Design a small-size sapphire metallized screen printing stage to ensure that the small-size sapph...

Embodiment 3

[0123] A highly reliable small size sapphire Mo-Mn metallization method, which comprises the following steps:

[0124] (1) Preparation of metallization paste for screen printing of gemstone chips

[0125] (1.1) get 65 parts by weight of molybdenum powder, 16 parts of corundum micropowder, 16 parts of manganese monoxide, 8 parts of silicon dioxide and 2 parts of calcium carbonate, add dehydrated alcohol, mix ball milling on planetary ball mill for 96 hours, then Pour it into a dry enamel tray and wait for the absolute ethanol to evaporate, then pass the dried mixed powder through a 130-mesh sieve;

[0126] (1.2) get 35 parts of terpineol, 8 parts of ethyl cellulose and 6 parts of polyvinyl alcohol by weight, mix with the powder after the above-mentioned (1.1) sieving, ball mill 84 hours on a planetary ball mill, spare;

[0127] (2) Metallized coating of small sapphire

[0128] (2.1) Design a small-size sapphire metallized screen printing stage to ensure that the small-size s...

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Abstract

The invention discloses a high-reliability small-size sapphire Mo-Mn metallization method. The method comprises the following steps: (1) preparing a jewel piece silk-screen printing metallization paste; (2) metallization coating of small-size sapphire; and (3) metallization sintering of the small-size sapphire. The special small-size jewel piece printing table designed by the patent of the invention can enhance the firmness of jewel pieces and prevent paste from hanging edges; a small-size jewel piece screen printing plate made of a nylon material is adopted, the resilience force of a screen is increased, metallization paste adhesion is prevented, and the coating uniformity of a small-size sapphire metallization layer is jointly guaranteed through the method. According to the metallization paste, the optimal specific formula of the metallization paste is screened out through a large number of experiments, in addition, on the basis that terpilenol and ethyl cellulose serve as binders in the metallization paste, polyvinyl alcohol is added, and shrinkage of a metallization layer can be effectively improved.

Description

technical field [0001] The invention relates to the field of ceramic metallization, in particular to a high-reliability and small-size sapphire Mo-Mn metallization method for millimeter wave and terahertz electric vacuum devices. Background technique [0002] Sapphire has the advantages of low dielectric loss, high strength, and strong thermal shock resistance, and is an ideal material for short millimeter wave and terahertz energy transmission windows. In the millimeter wave and terahertz frequency bands, the feature size of the window is very small (2mm<L<5mm, 2mm<B<4mm square gemstone), and the metallization dimensional tolerance required for the broadband impedance matching of the energy transmission window is limited to the order of microns . The thickness tolerance of 10-15μm brought by hand-painted metallization layer obviously cannot be applied to energy transmission windows in the millimeter wave and terahertz frequency bands. In addition, sapphire doe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/51
CPCC04B41/009C04B41/5138C04B41/474C04B41/4803C04B41/4869C04B14/303C04B41/5031C04B41/5035C04B41/5027C04B41/4535C04B41/0072C04B41/4511Y02P70/50
Inventor 岳贤宁唐中华刘洋陶环航许准李曼
Owner NANJING SANLE GROUP
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