Acidic ionic liquid, cleaning agent containing acidic ionic liquid and semiconductor substrate cleaning method

A technology for acidic ionic liquids and semiconductors, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, non-surface active detergent compositions, etc. Cleaning process and other issues, to achieve the effect of excellent full-process cleaning performance, excellent full-process universality, and simplified operation

Pending Publication Date: 2022-08-05
ZHEJIANG AUFIRST MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, H 2 o 2 The decomposition is caused by two reasons: 1, have to use, too high cleaning temperature
2. Decomposition caused by the catalysis of metal ions contained in the cleaning solution or introduced during the cleaning process
[0022] Therefore, there are various defects in the field of microelectronic technology in the prior art, such as the cleaning solution and the cleaning method in the semiconductor (such as semiconductor substrate) cleaning field, for example, although the cleaning solution provided in the various prior art has been described and/or cleaning methods, but these cleaning solutions and/or cleaning methods still have some shortcomings, such as complex and numerous componen

Method used

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  • Acidic ionic liquid, cleaning agent containing acidic ionic liquid and semiconductor substrate cleaning method
  • Acidic ionic liquid, cleaning agent containing acidic ionic liquid and semiconductor substrate cleaning method
  • Acidic ionic liquid, cleaning agent containing acidic ionic liquid and semiconductor substrate cleaning method

Examples

Experimental program
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Effect test

Example Embodiment

[0084] 1, the preparation of precursor crude product

[0085] Under the oil bath of 40°C, add 1,3-propane sultone into an appropriate amount of methanol, and then add N-methylimidazole dropwise after it is completely dissolved. After completion, leave standstill to separate out the solid, and suction filtration obtains the crude precursor product;

[0086] Wherein, the molar ratio of 1,3-propane sultone to N-methylimidazole is 1:1.2.

[0087] II. Recrystallization of precursors

[0088] The crude precursor product was added to an appropriate amount of methanol, and after all dissolved, heated to reflux, filtered while hot, the filtrate was allowed to stand until crystals were precipitated, the crystals were filtered out, washed with tetrahydrofuran for many times, and dried under vacuum at 80 ° C to obtain the precursor;

[0089] III. Preparation of ionic liquids

[0090] The precursor was mixed with an aqueous sulfuric acid solution with a concentration of 50% by mass, sti...

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PUM

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Abstract

The invention provides an acidic ionic liquid and a preparation method thereof, and particularly provides a cleaning agent containing the ionic liquid and a semiconductor substrate cleaning method using the cleaning agent, and the cleaning agent contains the ionic liquid, so that the cleaning agent and H2O2 can realize full-process cleaning of front and back sections such as FEOL and BEOL, and metal ions can be complexed, so that the cleaning effect is good, and the service life of the cleaning agent is prolonged. The cleaning agent prepared by the method inhibits decomposition of H2O2, prolongs the service life of the cleaning agent, prolongs the cycle index of the cleaning agent, also ensures the stability in the use process, and has huge potential application prospects and potential in the technical field of semiconductor cleaning.

Description

technical field [0001] The present invention relates to an acidic ionic liquid and its preparation method and use, more particularly to [BMIM]HSO 4 The invention relates to a preparation method and application thereof, a cleaning agent used in the field of microelectronics technology, and a preparation method and application thereof, and a semiconductor substrate cleaning method using the cleaning agent, belonging to the field of novel cleaning agents and the field of microelectronics technology. Background technique [0002] Among photoresist removal processes in the field of microelectronics processing technology, the most common process is plasma ashing to remove most of the photoresist, followed by an SPM wet cleaning process to remove the remaining organic residues. [0003] Among them, SPM cleaning solution is a typical cleaning solution for removing organic pollutants in the field of semiconductor front-end manufacturing (FEOL), which is sulfuric acid (H 2 SO 4 ) an...

Claims

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Application Information

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IPC IPC(8): C11D7/34C11D7/04C11D7/60H01L21/02
CPCC11D7/34C11D7/04C11D11/0047H01L21/02057
Inventor 侯军申海艳吕晶任浩楠
Owner ZHEJIANG AUFIRST MATERIAL TECH CO LTD
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