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All SiNx microstructure resonance beam pressure sensor

A pressure sensor and resonant beam technology, which is applied in the measurement of fluid pressure, the use of mechanical devices to transmit sensing components, and the measurement of fluid pressure through mechanical components, etc., can solve the problem that the thickness of the silicon pressure sensitive film cannot be accurately controlled, the sensor range and the design value difference. Large, impossible high-density integration and other problems, to achieve the effect of reducing device cost, good uniformity, and good machinability

Inactive Publication Date: 2004-12-08
INST OF ELECTRONICS CHINESE ACAD OF SCI
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AI Technical Summary

Problems solved by technology

Since silicon is used as the material of the pressure-sensitive membrane, the corrosion method is used in the production process, and the thickness of the silicon pressure-sensitive membrane cannot be precisely controlled.
The measuring range of the resonant beam pressure sensor is determined by the thickness of the pressure sensitive membrane, and the inaccurate thickness will lead to a large difference between the manufactured sensor’s measuring range and the design value
This structure is suitable for making a large-range resonant beam pressure sensor, but it is greatly limited for the measurement of micro-force
[0009] 4) The size of the microstructure resonant beam pressure sensor that can be made by using silicon material to make the pressure sensitive membrane can only be on the order of millimeters, and the size of the integrated device with other sensors or components will be very large, and it is impossible to make high-density integration device

Method used

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  • All SiNx microstructure resonance beam pressure sensor
  • All SiNx microstructure resonance beam pressure sensor
  • All SiNx microstructure resonance beam pressure sensor

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Embodiment Construction

[0019] From Figure 5 , Figure 6 and figure 1 , figure 2 Comparing the resonant beam pressure sensor chips, we can clearly see the full SiN x Microstructure resonant beam pressure sensors are different from silicon microstructure resonant beam pressure sensors. The chip of the silicon microstructure resonant beam pressure sensor is composed of two silicon chips that have been three-dimensionally processed and bonded together, all SiN x The microstructure resonant beam pressure sensor chip is just a three-dimensional processed silicon chip. The manufacturing process is simplified.

[0020] From Figure 5 and image 3 Comparing we can see that SiN x Microstructure resonant beam pressure sensor chip and new composite beam membrane SiN x The obvious difference between the microstructure resonant beam pressure sensor is SiN x The pressure sensitive membrane 17 of the microstructure resonant beam pressure sensor chip is made of ultra-thick and low-stress SiN x material....

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Abstract

A pressure sensor with full-SiNx micro resonant beam is composed of a resonant beam, a metal electrode and a resonant resistor on the resonant beam, a silicon substrate, and pressure-sensitive SiNx film on the substrate and under the resonant beam. Its advantages are high precision, low cost, micro structure and the power for measuring micro physical quantity.

Description

technical field [0001] The invention relates to a miniature pressure sensor, in particular to a microstructure resonant beam pressure sensor. Background technique [0002] So far, the microstructure resonant beam pressure sensor made by MENS technology is mainly made of single crystal silicon and polycrystalline silicon materials. The silicon resonant beam pressure sensor is mainly used for high-precision pressure measurement. Because it has a frequency output, it is easy to carry out digital processing; because it is manufactured with microelectronic technology, it is easy to achieve miniaturization, integration, and low-cost mass production. [0003] A common silicon microstructure resonant beam pressure sensor includes three parts: a resonant beam pressure sensor chip 1 , a tube cap 3 , and a tube base 4 . The silicon microstructure resonant beam pressure sensor chip is connected to the tube base through the electrode lead 2, and then connected to the external test circu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01D5/02G01L7/00
Inventor 于中尧
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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