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Deposition method of seed-crystal-free and bias-less diamond quasi-monocrystal film

A deposition method, diamond technology, applied in the direction of single crystal growth, chemical instruments and methods, crystal growth, etc., can solve problems such as little understanding of nucleation mechanism, low diamond nucleation density, and unclear low-pressure vapor phase growth mechanism.

Inactive Publication Date: 2006-02-22
TIANJIN UNIVERSITY OF TECHNOLOGY
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Problems solved by technology

[0003] The nucleation of diamond films is the most important step to obtain high-quality diamond films. However, the mechanism of low-pressure vapor phase growth is still not very clear. At the same time, little is known about the nucleation mechanism of silicon and other substrate surfaces, especially the smooth surface found in experiments. On substrates such as silicon, the nucleation density of diamond is very low, making it difficult to form continuous thin film materials

Method used

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Examples

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Embodiment Construction

[0008] The implementation is carried out in a hot wire CVD method system, and the substrates are silicon (100) and tantalum (Ta) and nickel (Ni) sheets respectively. The substrate is located 8mm below the filament, the filament is a tantalum wire with a diameter of φ0.8mm, and the reaction gas is a mixture of methane or acetone and hydrogen.

[0009] The growth process of the diamond film is carried out in two stages:

[0010] The first is the pre-nucleation process, that is, the formation of amorphous carbon; the concentration of methane or acetone is as high as 2-8vol%, the filament temperature is 1500-1800°C, the substrate temperature is 500-700°C, and the deposition time is 5-30 minutes.

[0011] Then there is the nucleation and growth stage of the diamond film; the filament temperature is adjusted to 1800-2200°C, the substrate temperature is adjusted to 750-900°C, the concentration of methane or acetone is adjusted to about 1vol%, and the deposition time is more than two ...

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Abstract

The deposition method of diamond quasi-monocrystal film for semiconductor material and device is characterized by that in the course of making diamond film deposition on the diamond substrate by using hydrogen gas and methane or acetone as reaction gas and adopting filament CVD method it does not adopt macroscopic defects nucleation method and bias nucleation method, but firstly adopts the process of pre-preparing amorphous carbon transion layer on substrate surface, then makes nucleation and growth process so as to obtain the flat and smooth oriented diamond quasi-monocrystal film with good crystallinity.

Description

technical field [0001] The invention belongs to a deposition method of a diamond quasi-single crystal film used for materials and devices. Background technique [0002] Diamond film has excellent photoelectric properties and is an ideal semiconductor material, which can be prepared into special semiconductor optoelectronic devices with high temperature resistance, radiation resistance and high power. In order to prepare a diamond film semiconductor device, it is first necessary to solve the problem of preparing a diamond film (especially a single crystal film or a quasi-single crystal film) with a high surface finish and few defects. To prepare the diamond film, chemical vapor deposition method (referred to as CVD method) is currently used. [0003] The nucleation of diamond films is the most important step to obtain high-quality diamond films. However, the mechanism of low-pressure vapor phase growth is still not very clear. At the same time, little is known about the nucl...

Claims

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Application Information

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IPC IPC(8): C30B25/02C23C16/27
Inventor 常明曲长庆朱宁宁延一吴小国杨保和陈希明
Owner TIANJIN UNIVERSITY OF TECHNOLOGY