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A carbon nanotube and logic technology, applied in the field of micro-nano electronic device circuits, can solve the problems of complex structure and difficult fabrication, and achieve the effects of improving performance and reliability, reducing fabrication difficulty, and reducing gate area

Inactive Publication Date: 2006-03-29
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Description
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Problems solved by technology

[0007] The purpose of the present invention is to solve the problems of complex structure and high manufacturing difficulty in the above-mentioned existing devices, and in order to improve the performance and manufacturing efficiency of the device; Only one carbon nanotube is used to make a double-gate carbon nanotube logic "OR" gate device, which is easy to manufacture, integrated and has high reliability

Method used

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Effect test

Embodiment 1

[0056] according to image 3 , 4 and 5 make the "OR" gate logic device of the carbon nanotube double gate structure of the utility model.

[0057] Silicon with (001) orientation is selected as the substrate 11 . Utilize organic vapor phase deposition method (PECVD), prepare the SiO with 300nm thick on the substrate 11 2 Layer 10. First make the gate 4, 5: in SiO 2 Electron photoresist (PMMA) with a thickness of 80 nm is uniformly coated on the insulating layer 10 . The photoresist after electron beam exposure is developed and fixed, and after the exposed photoresist is removed, two grooves with a width of 30 nm and a distance of 50 nm are formed on the photoresist layer. Etching of SiO without photoresist coverage using dry etching 2 , in SiO 2 Two trenches with a width of 30nm, a depth of 30nm and a distance of 50nm are formed on the insulating layer. A layer of Al with a thickness of 30 nm is deposited on the entire surface of the device by electron beam evaporation....

Embodiment 2

[0059] according to image 3 , 5 and 6 make another "OR" gate logic device with carbon nanotube double gate structure of the present utility model.

[0060] Silicon with (001) orientation is selected as the substrate 11 . Utilize organic vapor phase deposition method (PECVD), prepare the SiO with 300nm thick on the substrate 11 2 Layer 10. First make the gate 4, 5: in SiO 2 Electron photoresist (PMMA) with a thickness of 80 nm is uniformly coated on the insulating layer 10 . The photoresist after electron beam exposure is developed and fixed, and after the exposed photoresist is removed, two grooves with a width of 30 nm and a distance of 50 nm are formed on the photoresist layer. Etching of SiO without photoresist coverage using dry etching 2 , in SiO 2 Two trenches with a width of 30nm and a depth of 30nm are formed on the insulating layer. A layer of Al with a thickness of 30 nm was deposited on the entire device surface by electron beam evaporation. The photoresis...

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Abstract

This invention relates to a carbon nm tube logic "OR" device and its preparation technology. The said device includes a substrate with an insulation layer, carbon nm tube, grids, electrodes and a resistor, two grids in the groove on the insulation layer, two electrodes are set in the groove on the insulation layer at both sides of two two grids, a carbon nm tube contacts with the grid anjd electrode, one of the electrodes connects the earth the other connects to a constant voltage by a resistor. The two grids control on-off of the carbon nm transistor to realize logic "OR" function.

Description

technical field [0001] The invention belongs to micro-nano electronic device circuits, in particular to a carbon nanotube OR gate logic device and a preparation method thereof. Background technique [0002] Traditional semiconductor technology has been developed for decades and has achieved brilliant results. Various semiconductor devices have become an inseparable and important part of people's lives. Especially in the past 20 to 30 years, with the maturity of semiconductor integrated circuit technology, various microelectronic products represented by electronic computers have entered all aspects of people's lives and become an important part of people's lives. These semiconductor integrated circuits are mainly composed of digital circuits composed of "metal-oxide-semiconductor field effect transistors" (MOSFET). This kind of integrated circuit has been developed to the present and its technical process is very mature, the performance of the device is stable, and the inte...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/04H03K19/20H03K19/02H01L21/822
Inventor 赵继刚王太宏
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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