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Silicon nano-wire and its preparation method

A silicon nanowire and silicon monoxide technology, applied in the field of silicon nanowires and their preparation, can solve problems such as limiting the quality and performance of silicon nanowire products

Inactive Publication Date: 2006-07-05
PEKING UNIV
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Problems solved by technology

In these methods, the preparation of silicon nanowires is generally at atmospheric pressure or low vacuum (background pressure ≥ 10 -2 mbar), 850°C-1200°C growth temperature conditions, the growth environment under this condition limits the further improvement of the quality and performance of silicon nanowire products, and also brings many uncertain factors to the study of microscopic growth mechanism

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  • Silicon nano-wire and its preparation method
  • Silicon nano-wire and its preparation method
  • Silicon nano-wire and its preparation method

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Embodiment Construction

[0022] The required equipment for the specific implementation process of the present invention comprises a full-automatic ultra-high vacuum electron beam evaporation system (Switzerland BALZERS ULS 400 system, the background pressure of the main vacuum chamber is 2 × 10 -10 mbar) and resistive constant temperature control system. Equipment such as figure 1 As shown, it includes the pre-vacuum chamber 1 of the ultra-high vacuum electron beam system (ULS 400); the main vacuum chamber 2 of the ULS400 system; the sample 3; the heating device 4 of the ULS 400 system configuration; system) 5; evaporation source crucible (Si+SiO 2 source) 6; electron gun 7; film thickness and evaporation rate controller 8; quadrupole mass spectrometer 9; ULS 400 system temperature control and sample rotation device 10.

[0023] The specific method for preparing silicon nanowires is:

[0024] (1) Preparation of silicon source for evaporation: silicon dioxide (SiO) with a purity of 99.99% and a puri...

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Abstract

A silicon nano-wire composed of monocrystal silicon core and non-crystal oxide shell is perpared through proportionally mixing high-purity Si powder and SiO2 powder, stirring, pressing to become sheet, putting it in vacuum crucible of ultrahigh-vacuum electronic beam system, ultrasonic washing of SiO2 / Si as substrate by acetone or methanol solution, drying by blwing N2, putting it in prevacuumizing chamber, vacuumizing, transferring the substrate in main vacuum chamber, heating to 650-750 deg.C, evaporating Si+SiO2 source in crucible by electronic beam to deposite it on the substrate, and cooling.

Description

technical field [0001] The invention relates to a nanometer material and a preparation method thereof, in particular to a silicon nanowire and a preparation method thereof. Background technique [0002] One-dimensional nanomaterials are important components of future nanoelectronic and optoelectronic devices, and have good prospects in both academic research and application development. Silicon nanowires are an important class of one-dimensional nanomaterials. At present, the methods for preparing silicon nanowires mainly include thermal evaporation, chemical vapor deposition (CVD), and laser ablation. In these methods, the preparation of silicon nanowires is generally at atmospheric pressure or low vacuum (background pressure ≥ 10 -2 mbar), 850°C-1200°C growth temperature conditions, the growth environment under this condition limits the further improvement of the quality and performance of silicon nanowire products, and also brings many uncertain factors to the study of ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06C30B29/62C01B33/021
Inventor 许向东王银川刘忠范
Owner PEKING UNIV