Ceramic heater

A ceramic heater and heater technology, applied in ohmic resistance heating, heating element shape, electric heating device, etc., to achieve the effect of less workpiece pollution

Inactive Publication Date: 2001-10-31
IBIDEN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] Another disadvantage is that when the semiconductor wafer is heated by keeping it apart from the heating surface of the ceramic heater with support pins, etc., the temperature distribution of the heating surface will be reflected in the ceramic heater.

Method used

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  • Ceramic heater
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0184] (1) A mixture containing 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Co., average particle diameter 1.1 µm), 4 parts by weight of yttrium oxide (average particle diameter 0.4 µm) and 12 parts by weight of acrylic adhesive The mixture and the rest of the alcohol composition were spray-dried to make granular powder, and the aluminum nitride powder contained Na and B with concentrations of 0.1ppm and 0.8ppm respectively.

[0185](2) The above-mentioned granular powder is put into a metal mold and formed into a green board. The green board was drilled to form holes corresponding to through holes 15 for receiving semiconductor wafer support pins and holes corresponding to blind holes 14 for embedding thermocouples (1.1 mm diameter x 2 mm deep).

[0186] (3) Next, at 1800°C and 200 kg / cm 2 Next, hot press the green plate obtained by forming to form a 3 mm thick aluminum nitride plate.

[0187] From this plate, a disc with a diameter of 210 mm wa...

Embodiment 2

[0204] Containing 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Co., average particle diameter 1.1 µm), 5 parts by weight of calcium oxide (average particle diameter 0.3 µm), and 12 parts by weight of an acrylic binder and The rest is alcohol composition spray-dried to make particle powder, the aluminum nitride powder contains Na and B at concentrations of 0.1ppm and 0.8ppm respectively. Completely repeat the other steps of Example 1 to make a ceramic heater.

Embodiment 3

[0206] Containing 100 parts by weight of aluminum nitride powder (manufactured by Tokuyama Co., with an average particle size of 1.1 µm), 3 parts by weight of Li 2 O (average particle size 0.3 micron), 2 parts (weight) Pb 2 O (average particle diameter 0.3 micron) and 12 parts (weight) acrylic adhesive and the composition spray-drying that all the other are alcohol make particle powder, and described aluminum nitride powder contains the Na that concentration is respectively 0.1ppm and 0.8ppm and B. Completely repeat the other steps of Example 1 to make a ceramic heater.

[0207] Next, the surface of the heater board 11 was polished to Rmax=0.8 micron with 0.5 micron diamond paste, after which a ceramic heater was produced as described in Example 1.

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Abstract

The present invention has its object to provide a ceramic heater which has a high thermal conductivity so that the surface temperature of the heater plate promptly follows the temperature change of the heating element to control the temperature of the wafer-heating surface with high efficiency and the thermal diffusion of impurity from the ceramic heater can be successfully prevented. This invention provides a ceramic heater comprising a nitride ceramic substrate and a heating element either on the surface or internally of said substrate wherein said nitride ceramic board contains an element other than constituent elements of nitride ceramics and a work-heating surface has the JIS B 0601 surface roughness of Rmax=0.2 to 200 mu m.

Description

technical field [0001] The invention relates to a ceramic heater which is used in the semiconductor industry and does not contaminate semiconductor wafers. technical background [0002] A semiconductor device is manufactured via a method including coating a photosensitive resin as a resist on a semiconductor wafer and etching an uncoated area. [0003] When a photosensitive resin is applied in liquid form to the surface of a semiconductor wafer by means of a spin coater or the like, it must be dried after coating to disperse solvents and the like, so the semiconductor wafer thus coated is heated on a heater. [0004] Conventional metal heaters hitherto used for this purpose consist of heating elements placed on the back of an aluminum plate. However, such metal heaters have the following disadvantages. [0005] First, because it contains metal material, the heater plate must be about 15mm thick. This is because thin metal plates thermally expand when heated, creating curl...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/027H05B3/20H05B3/56
CPCH01L21/67103H05B3/20
Inventor 伊藤康隆平松靖二
Owner IBIDEN CO LTD
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