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Semiconductor device

A semiconductor and component technology, applied in the field of semiconductor components, to achieve the effect of reducing inactive current and suppressing substrate current

Inactive Publication Date: 2007-07-04
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current flowing in the silicon substrate 910 is called a substrate current, and adversely affects peripheral logic circuits in the semiconductor chip in the control circuit shown in FIG. 1 .

Method used

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  • Semiconductor device
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Examples

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Embodiment Construction

[0039] Embodiments of the present invention will be described below with reference to the drawings. The embodiments do not limit the present invention.

[0040] FIG. 1 is a top view of an LDMOS region according to an embodiment of the present invention. This LDMOS region is divided into a first drift region and a second drift region. The second drift area is provided around the first drift area. The P-type connection region 160 is provided around the second drift region. Also, an N-type connection region 170 is disposed around the connection region 160 . Peripheral logic circuits (not shown) such as a control circuit for controlling LDMOS are provided around the connection region 170 .

[0041] The second drift region is sandwiched between the first drift region and the connection region 160 in any of the planar regions shown in FIG. 1 . That is, the second drift region is closer to the connection region 160 than the first drift region.

[0042] 2 to 6 are enlarged cross...

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PUM

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Abstract

A semiconductor device comprises a semiconductor substrate having a main surface; a semiconductor layer of a first conduction type provided on the main surface of said semiconductor substrate; a first buried layer of the first conduction type provided between said semiconductor layer and said semiconductor substrate; a first connection region of the first conduction type provided around said first buried layer, said first connection region extending from the surface of said semiconductor layer to said first buried layer; a switching element provided in the surface region of said semiconductor layer on said first buried layer; and a low breakdown-voltage element provided in a surface region of said semiconductor layer, said low breakdown-voltage element being closer to said first connection region than said switching element and having lower breakdown voltage than that of said switching element.

Description

technical field [0001] The present invention relates to semiconductor elements. Background technique [0002] In the past, LDMOS (Lateral Double Diffused Metal Oxide Semiconductor) was frequently used in power integrated circuits. LDMOS is a semiconductor device capable of switching large currents. [0003] FIG. 8 is a circuit diagram of a general power switch circuit using LDMOS. The power switch circuit adopts a synchronous rectification power supply mode. The power supply of the high voltage Vcc is connected to the drain electrode of LDMOS1, and the ground GND is connected to the source electrode of LDMOS2. Between LDMOS1 and LDMOS2, current is supplied from node N to the load through a filter. [0004] An input signal is supplied to gate electrodes of LDMOS1 and LDMOS2 through a control circuit. The control circuit controls the input IN1 of LDMOS1 and the input IN2 of LDMOS2 so that LDMOS1 and LDMOS2 are not turned on at the same time. [0005] When LDMOS1 is in th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L27/04H01L21/8234H01L27/088H01L29/08H01L29/10
CPCH01L29/1083H01L29/0847H01L29/7801H01L29/7835
Inventor 中村和敏末代知子川口雄介中川明夫
Owner KK TOSHIBA
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