Multi electric potential field plate lateral high voltage N type MOS transistor
A field plate and multi-potential technology, which is applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve the problems of increasing the peak electric field of the drain region, reducing the reliability of the chip, and improving the breakdown voltage, so as to improve the breakdown voltage, Effect of reducing impact ionization and reducing on-resistance
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[0015] Embodiment A multi-potential field plate high-voltage N-type metal oxide semiconductor transistor involving a high-voltage device is composed of an N-type substrate 1, a P-type epitaxial layer 2, a source 3, a drain 4, a polysilicon gate 5, a field oxide layer 6 and The P-type epitaxial layer 2 is set on the top of the N-type substrate 1, the field oxide layer 6 is located between the source 3 and the drain 4, and the source 3, drain 4, polysilicon gate 5 and field oxide layer 6 are located on the P-type Above the epitaxial layer 2, a gate oxide layer 7 is provided between the polysilicon gate 5 and the P-type epitaxial layer 2, and the oxide layer 8 is located above the source 3, the drain 4, the polysilicon gate 5 and the field oxide layer 6, and the P-type epitaxial layer A P-type contact hole 9 is provided above the layer 2, below the oxide layer 8 and between the source 3 and the field oxide layer 6, and metal aluminum leads 13, 14 and 15 are respectively provided o...
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