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Fin-shaped element of insulating silicon chip and method for forming same

An insulating silicon, fin-shaped technology, applied in the fin-shaped structure field of thyristor, can solve the problems of inconvenience, slowing down of SRAM writing and reading, affecting the operation speed of SRAM, etc., and achieves simple production method and improved gate control capability. , the effect of reducing the size of the short channel effect

Active Publication Date: 2007-07-11
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally speaking, the structure of the internal transistors of the semiconductor components produced by SOI technology is fully depleted, so when using SOI technology to manufacture 1T-SRAM, because of the The completely depleted relationship between (Source) will cause the speed of SRAM writing and reading to slow down, thereby affecting the operating speed of SRAM. How to effectively improve the operating speed of SRAM manufactured by SOI technology and the operating speed of thyristors, for the semiconductor An important direction and goal of production
[0005] In summary, the memory of the prior art clearly has inconveniences and defects in actual use, so it is necessary to improve it.

Method used

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  • Fin-shaped element of insulating silicon chip and method for forming same
  • Fin-shaped element of insulating silicon chip and method for forming same
  • Fin-shaped element of insulating silicon chip and method for forming same

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Embodiment Construction

[0024] Hereinafter, the present invention will be described in detail.

[0025] FIG. 3 is a schematic structural diagram of a 1T-SRAM according to a preferred embodiment of the present invention. As shown in the figure, the 1T-SRAM according to the preferred embodiment of the present invention has a transistor structure with a fin-shaped element on the right and a fin-shaped element on the left. thyristor structure. where the thyristor structure of the fin element is defined by P + type semiconductor 320, N type semiconductor 330, P type semiconductor 340, second word line 350, N + Type Semiconductor 360 and N + Type semiconductor 370 constitutes. While the transistor structure of the fin-like element is composed of N + type semiconductor 370, first word line 380, bit line 390, N + Type Semiconductor 400 and N + type semiconductor 410. Thyristor anode 310 is connected to P + type semiconductor 320, and the second word line 350 is wrapped around the periphery of the P-t...

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Abstract

The invention is a finlike component of insulated silicon chip and its forming method, containing: a silicon substrate covering the top insulating layer of the silicon substrate, a finlike thyristor and formed with a nonempty region, and a grid layer. The other implementation example contains a silicon substrate covering the top insulating layer, a finlike thyristor and a grid layer, part of which covers the thyristor to form a nonempty region in the thyristor structure. By this, it can reduce short channel effect size of semiconductor component and improve the completely empty condition of finlike component in SOI manufacturing process, thus making the operating speed of the thyristor quicker and can also meet the demand on manufacturing system chip.

Description

technical field [0001] The invention relates to a structure of a thyristor, in particular to a fin structure of a thyristor of a silicon-on-insulator (SOI) chip. Background technique [0002] Integrated memory circuits are now widely used in various applications, especially in computer systems. With the improvement of production and the reduction of costs, the memory capacity can be greatly increased, and the manufacturing cost can also be reduced, thus greatly expanding In addition to the range of memory usage, there are currently two types of devices used for data storage in computers, including nonvolatile memory devices and volatile memory devices. General non-volatile memory devices include known read only memory (Read Only Memory, ROM), erasable read only memory (EPROM), electrically erasable read only memory (EEPROM), and flash memory (FlashEEPROM). Volatile memory devices include dynamic random access memory (DRAM) and static random access memory (SRAM). Random acc...

Claims

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Application Information

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IPC IPC(8): H01L29/74H01L21/328H01L27/10H01L27/11H01L21/822
Inventor 杨国男詹宜陵陈豪育邓凌思杨富量
Owner TAIWAN SEMICON MFG CO LTD