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N-type heat treatment process for HgCdTe materials grown from melting method

A heat treatment method, mercury cadmium telluride technology, applied in the direction of crystal growth, post-treatment, post-processing details, etc.

Inactive Publication Date: 2007-07-18
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But we found that the dislocations in the low-mobility wafers are related to the excess of metal elements Hg and Cd

Method used

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  • N-type heat treatment process for HgCdTe materials grown from melting method
  • N-type heat treatment process for HgCdTe materials grown from melting method

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Experimental program
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Embodiment Construction

[0020] The specific embodiment of the present invention is described in detail below in conjunction with embodiment:

[0021] A. First, clean the glass tube and quartz boat with detergent and rinse with water, then soak in chromic acid for 4 hours, rinse with deionized water for 15 times, and dry for later use;

[0022] B. Clean the ground HgCdTe sample ultrasonically with acetone, deionized water and alcohol and dry it naturally on filter paper; then insert the wafer into the quartz boat and push it into the glass tube. Drop in mercury drops the size of half a soybean;

[0023] C. Connect the above-mentioned glass tube with the wafer and mercury drop into the vacuum system and evacuate to 0.02Pa and then seal it;

[0024] D. Push the exhaust-sealed glass tube with the chip into the dual-temperature zone tube electric furnace for low mercury pressure heat treatment to eliminate dislocations. The method is to heat the sample to 300-350 °C and the mercury source to 50- 100°C, ...

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Abstract

The present invention discloses one kind of N-type heat treatment process for HgCdTe material grown through melt process. The N-type heat treatment process of the present invention features one low Hg pressure thermal treating process is added before available N-type heat treatment process so as to eliminate dislocation related with Hg and Cd excess and to raise the product quality and performance. The present invention has the main advantage of excellent effect obtained via slight change in technological process without altering the instrument and apparatus in use.

Description

technical field [0001] The invention relates to post-processing technology of single crystal or homogeneous polycrystalline compound material with a certain structure, in particular to an N-type heat treatment method of mercury cadmium telluride (HgCdTe) photoconductive detector crystal material used for infrared mid-wave detection. Background technique [0002] Mercury cadmium telluride is an extremely important infrared material. Photoconductive infrared detectors made of mercury cadmium telluride crystal materials grown by the melt method have been used in meteorological satellites, ocean satellites, ground-funded satellites, missile guidance, and infrared thermal imaging cameras. , infrared temperature measurement and environmental protection and other fields have been widely used. In order to meet the requirements of making photoconductive detectors, the first step after crystal growth of HgCdTe material is N-type heat treatment, the purpose of which is to minimize the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/02
Inventor 萧继荣林杏潮龚海梅杨晓阳张莉萍陆荣邵秀华
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI