Semiconductor memory unit and array using ultra-thin medium breakdown phenomenon

Abstract

A semiconductor memory unit and memory array based on the breakdown phenomenon of ultra-thin (50 A or less) medium is disclosed. A data storage element around an ultra-thin medium layer (grid oxidizing layer) is made up for storing information. Its method is to apply a stress to said ultra-thin medium to break it down, so creating the leakage current level of memory unit. Its read-out is by sensing the current sucked by the unit. It is made up by advanced CMOS logic technology.

Description

Technical field [0001] The content of the present invention relates to a non-volatile programmable semiconductor memory, more specifically, a non-volatile programmable semiconductor memory cell that uses an ultra-thin medium (such as a MOS gate medium) to store digital information and a memory array using such a cell. Background technique [0002] The non-volatile memory can retain the stored data even after the power is removed. This is necessary or at least highly desirable in many different kinds of computers and other electronic devices. A common type of non-volatile memory is Programmable Read-Only Memory ("PROM"), which utilizes word line / bit line intersection elements such as fuses and anti-fuse and avalanche injection of metal oxides such as floating gate A charge trap device such as a semiconductor ("FAMOS") transistor is used to store logic information. PROM is generally not reprogrammable. [0003] A PROM cell that uses the breakdown of the s...

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Thereafter, when the gated diode is read

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