Semiconductor laser module, laser unit and Raman amplifier
A Raman amplifier and laser module technology, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of signal light amplification characteristics changes, small gain, etc., and achieve the effect of good wavelength stability
Inactive Publication Date: 2002-07-10
FURUKAWA ELECTRIC CO LTD
View PDF0 Cites 15 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] Although Raman amplification has such a feature that the wavelength of the gain used for generation can be changed arbitrarily by changing the pump light wavelength, the gain (Raman gain) is small
In addition, since the gain used is shifted from the wavelength of the pump light to a longer wavelength by a predetermined wavelength (Raman shift), a change in the wavelength of the pump light provides a wavelength change for the generated gain, resulting in amplification of the signal light characteristics change
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0013] figure 1 Embodiment 1 of the semiconductor laser module according to the present invention is described;
Embodiment 2
[0014] figure 2 Embodiment 2 of the semiconductor laser module according to the present invention is illustrated;
Embodiment 3
[0015] image 3 Embodiment 3 of the semiconductor laser module according to the present invention is illustrated;
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Property | Measurement | Unit |
---|---|---|
reflectance | aaaaa | aaaaa |
reflectance | aaaaa | aaaaa |
reflectance | aaaaa | aaaaa |
Login to View More
Abstract
A semiconductive laser module according to the present invention is configured with a semiconductive laser module having a semiconductive laser device, a cavity formed with at least one light feedback means included, and an optical fiber located at a front side of the cavity, wherein an optical filter for transmitting light of wavelength within a predetermined range is disposed in the cavity. The above-noted semiconductive laser module additionally has a combination of a collimator and a focusing lens for coupling emitted light from the semiconductive laser device with the optical fiber, and the optical filter is disposed between the collimator and the focusing lens. The optical filter has a dielectric multi-layered filter for transmitting a desired wavelength. A laser unit according to the present invention is configured with a plurality of semiconductive laser modules as noted above, and a polarization combiner for making a polarization combination of emitted light from the plurality of semiconductive laser modules. A Raman amplifier according to the present invention has a pumping light source configured with the semiconductive laser module or the laser unit.
Description
technical field [0001] The invention relates to a Raman amplifier used in optical communication, and a semiconductor laser module and a laser unit using the Raman amplifier as a pumping light source. Background technique [0002] In most current applications of optical fiber communication systems, rare earth doped fiber amplifiers are used. Specifically, an erbium-doped fiber amplifier (hereinafter referred to as "EDFA") with erbium doping is generally used. However, EDFAs have a practical gain wavelength bandwidth ranging from 1530nm to 1610nm only. In addition, EDFA, when applied to wavelength division multiplexed light, has wavelength dependence in gain to produce a difference in gain depending on the wavelength of signal light. [0003] Before DWDM (Dense Wavelength Division Multiplexing), Raman amplification attracted attention as an amplification system having a wider frequency band than EDFA. Raman amplification is an optical signal amplification method utilizing t...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/42G02B26/00G02F1/35H01S3/06H01S3/094H01S3/30H01S5/06H01S5/14
CPCG02B6/4215G02B6/4207G02B6/4204G02B6/4201H01S5/141H01S3/302G02B6/4286
Inventor 松浦宽味村裕爱清武清水健男
Owner FURUKAWA ELECTRIC CO LTD
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Patsnap Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com