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Process for treating substrate of epitaxial chip for high-brightness gallium nitride-base LED

A light-emitting diode, gallium nitride-based technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of complex process routes, unobvious stress release of gallium nitride and sapphire substrates, etc., to reduce stress accumulation, high The effect of brightness and uniformity

Inactive Publication Date: 2002-11-13
江苏北极皓天科技有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

However, in this public technology, after the bottom gallium nitride material is grown, the epitaxial wafer needs to be taken out from the growth equipment and grooved, and then the grooved epitaxial wafer is put into the growth equipment for the second Sub-epitaxial growth, its process route is complicated, and the stress release between GaN and sapphire substrate is not obvious

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Grooves are carved on the surface of the sapphire substrate to be epitaxially grown, the width of the groove is 30 microns, the depth is 5 microns, and the distance between the grooves is 400 microns. The groove divides the surface of the sapphire substrate into many small pieces, and epitaxial growth is carried out after the groove is completed. After the growth is completed, the epitaxial layer at the small block is used as the basic material of the light-emitting diode, and the light-emitting diode is made into a light-emitting diode through a subsequent process. Compared with the method of not carving grooves on the surface of the sapphire substrate, the compressive stress on the epitaxial layer is reduced. 1 / 2 or so.

Embodiment 2

[0018] A silicon dioxide film is deposited on the surface of the sapphire to be epitaxially grown, and grooves are carved on the film. The width of the groove is 400 microns, the distance between the grooves is 50 microns, and the depth of the groove reaches the surface of the sapphire substrate. The surface is divided into many small pieces by the deposited thin film material, the surface of the small piece is the surface of the sapphire substrate, and the edge of the small piece is surrounded by the deposited thin film material, and then epitaxial growth is performed. During the epitaxial growth, the GaN material grows on the surface of the small block (ie, the surface of the sapphire substrate), and the stress between the GaN epitaxial layer and the sapphire substrate is released at the edge of the small block. After the growth is completed, the epitaxial layer at the small block is used as the basic material of the light-emitting diode, and the light-emitting diode is made ...

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Abstract

A processing method for substrate of an epitaxial plate of a high-luminance gallium nitride base LED (light emitting diode) is characterized for external growing by that the substrate surface of sapphire awaiting epilocial growth is etched in to many small plots of slots whose width is 0.001-1000 micron, depth is 0.001-300 micron, and spacing is 0.01-10000 micron. An alternative method is first to deposit a film on the surface of sapphire awaiting epitaxial growth and them etching the film into many small blots of slots whose depth reaches the substrate surface of sapphire, width is 0.01-10000 micron, and spacing is 0.01-10000 micron therefore so as to greatly reduce the stress accumulation between the epitaxial layer and the substrate in the period of epitaxial growing to get high-luminance and good-homogeneity LED.

Description

technical field [0001] The invention relates to a substrate processing method for a high-brightness gallium nitride-based light-emitting diode epitaxial wafer, and belongs to the technical field of optoelectronic materials. Background technique [0002] In recent years, GaN-based blue and green light-emitting diodes (LEDs) and related devices have become a research hotspot in the field of semiconductor optoelectronics due to their huge application prospects. It can be widely used in large and ultra-large full-color display screens in stadiums, stations, airports, industrial and commercial industries, etc. [0003] Full-color high-brightness LEDs will bring about a revolution in lighting technology. Using the combination of high-brightness red, green, and blue LEDs, they can emit light sources of various colors with continuously adjustable wavelengths to form a full-color light source. Especially for white light sources, its power consumption is only equivalent to 10% to 20%...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 罗毅郭文平胡卉孙长征郝智彪
Owner 江苏北极皓天科技有限公司
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