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Exposure process

An exposure method, rectangular technology, applied in the field of exposure, can solve problems such as difficulty in obtaining patterns and difficulty in the influence of 3θ aberration, and achieve the effect of reducing the fluctuation and suppressing the influence of 3θ aberration

Inactive Publication Date: 2003-03-05
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0025] In this way, with the miniaturization of circuit patterns, it is difficult to obtain a desired pattern on the wafer due to the aberration of the projection lens, and it is extremely difficult to reduce the influence of 3θ aberration in particular.

Method used

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Embodiment Construction

[0044] Embodiments of the present invention will be described below with reference to the drawings.

[0045] (Embodiment 1)

[0046] figure 1 Shown is a schematic configuration diagram of the exposure apparatus according to the present embodiment given in principle. It is basically the same as the usual exposure device, that is, the illumination light from the illumination system composed of the light source 1 and the illumination optical system 2 is irradiated onto the exposure mask 3 on which the desired mask pattern is formed, and through the projection lens The (projection optical system) 4 is an exposure device for projecting a pattern image formed by light passing through an exposure mask (reticle) 3 onto a wafer (semiconductor substrate) 5 . In addition, when the projection optical system includes a plurality of lenses, the projection lens 4 referred to here means a collection of the plurality of lenses, and can be considered to have optical characteristics equivalen...

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Abstract

Disclosed is an exposure method comprising preparing an exposure apparatus including an illumination system and a projection lens, setting, in the exposure apparatus, a photomask having a mask pattern including a plurality of unit circuit patterns arranged like a checkered flag pattern and a plurality of unit auxiliary patterns arranged between the unit circuit patterns, and projecting the mask pattern onto a substrate through the projection lens by irradiating the photomask with light from the illumination system, wherein the unit circuit patterns and the unit auxiliary patterns generate a plurality of diffraction light spots on a pupil plane of the projection lens, and the four diffraction light spots having higher light intensities than the remaining diffraction light spots are distributed on the pupil plane in a cycle of 90°.

Description

technical field [0001] The present invention relates to an exposure method, and particularly relates to a technique for reducing the influence of aberration in a lithography process of semiconductor manufacturing. Background technique [0002] In recent years, along with the miniaturization of circuit patterns, the influence of aberration of a projection lens of an exposure apparatus has become a problem. [0003] If the aberration of the projection lens is to be reduced, the aberration of the optical system needs to be converted into the form of wavefront aberration due to the need for physical optics processing. Zernike polynomials are currently widely used as a method of expressing wavefront aberrations as a function of pupil coordinates. The first 16 terms of this Zernike polynomial can be expressed as [0004] Z1:1 [0005] Z2: rcosθ [0006] Z3: rsinθ [0007] Z4: 2r 2 -1 [0008] Z5: r 2 cos2θ [0009] Z6: r 2 sin2θ [0010] Z7: (3r 2 -2r)cosθ [0011] Z8...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/18G03F1/36G03F1/70G03F7/20H01L21/027H01L21/301
CPCG03F7/70433H01L21/027
Inventor 小峰信洋浅沼庆太东木达彦
Owner KK TOSHIBA
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