Doping method used in vertical pulling silicon single crystal preparation and its installation
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- GRINM SEMICONDUCTOR MATERIALS CO LTD
- Publication Date
- 2003-04-30
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
1. Technical field
[0001] The invention relates to a doping process and equipment in single crystal growth by self-melting pulling method, more specifically to a doping method and equipment for producing single crystal silicon rods. 2. Background technology
[0002] Most semiconductor silicon single crystals are produced by the Czochralski method. In this method, polysilicon is put into a quartz crucible, heated and melted, and then the molten silicon is slightly cooled, given a certain degree of supercooling, and a silicon single crystal (called a seed crystal) with a specific crystal orientation is placed In contact with the molten silicon, by adjusting the temperature of the melt and the upward lifting speed of the seed crystal, when the seed crystal grows to a diameter close to the target, increase the lifting speed to make the single crystal grow with a nearly constant diameter. At the end of the growth process, when the silicon melt in the crucible has not completely ...