Doping method used in vertical pulling silicon single crystal preparation and its installation

A technology of Czochralski silicon and single crystal, which is applied in the direction of single crystal growth, chemical instruments and methods, self-melt liquid pulling method, etc., to achieve the effects of improving doping efficiency, easy availability of raw materials and simple structure

Inactive Publication Date: 2003-04-30
GRINM SEMICONDUCTOR MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But its doping efficiency is only 20-45%
Moreover, after using this method, since it may be due to the uneven diffusion of dopants in the molten silicon, this method will cause more melting back (during the growth of silicon cryst...

Method used

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  • Doping method used in vertical pulling silicon single crystal preparation and its installation
  • Doping method used in vertical pulling silicon single crystal preparation and its installation
  • Doping method used in vertical pulling silicon single crystal preparation and its installation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Place 4.56 grams of semiconductor-grade phosphorus (P), the element to be doped, in the inner cylinder 21 of the doping device, hang the doping device with the inner cylinder 21 in the crystal pulling chamber, and evacuate to 6.5Pa. The pulling chamber and the crystal growth chamber are filled with argon, so that the pressure of the argon is 2.66×10 3 Pa, 30 kg of polysilicon as raw material is placed in a quartz crucible to melt the polysilicon. After the polysilicon is melted, the temperature of the molten silicon is stabilized at 1400°C. The doping device of the inner cylinder of impurity P (phosphorus) descends to the liquid level of the polysilicon melt at a speed of 100 mm / min, so that the distance between the lower port surface of the bell jar 19 and the molten polysilicon liquid level is 100 mm. After seeing from the window that the doping element P is completely volatilized (about 5 minutes), the quartz crucible continues to rotate for 20 minutes under the cond...

Embodiment 2

[0039] The operating method and equipment are the same as in Example 1, except that the phosphorus in the inner cylinder is 66.36 grams, and the vacuum is evacuated to 11Pa, and the pressure of the argon gas in the crystal pulling cabin and crystal growth chamber is 1.3×10 4 Pa, the amount of raw polysilicon is 60 kg, the temperature of the melted silicon is stable at 1422C, the rotation speed of the quartz crucible is 6 rpm, and the doping device with the inner cylinder containing the doping element P is at 150mm / min The speed drops to the liquid level of the polysilicon melt, so that the lower port surface of the bell jar 19 is 200 mm away from the molten polysilicon liquid level. After seeing the phosphorus volatilize completely from the window (about 47 minutes), the quartz crucible rotates at a rotational speed Continue to rotate at 6 rpm for 80 minutes. After closing the door of the crystal lifting cabin, keep the air pressure in the body lifting cabin at 1.3×10 4 Pa, op...

Embodiment 3

[0042] The operation method and equipment are basically the same as in Example 1, except that the doping element in the inner cylinder is semiconductor-grade antimony Sb, 112.04 grams, vacuumed to 7Pa, and the pressure of argon in the crystal pulling chamber and crystal growth chamber is 2.0× 10 3 Pa, the amount of raw polysilicon is 60 kg, the temperature of molten silicon is stable at 1450 ° C, the rotation speed of the quartz crucible is 10 rpm, and the doping device with the inner cylinder containing the doping element Sb is at 500 mm / min The speed is lowered to the liquid level of the polysilicon melt, so that the distance between the lower port surface of the bell jar 19 and the polysilicon liquid level of melting is 5 mm. After the Sb is completely volatilized from the window, (about 50 minutes), the quartz crucible Rotate at a rotation rate of 10 rpm and continue to rotate for 120 minutes, close the door of the crystal pulling cabin, and keep the air pressure in the cr...

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Abstract

A process for doping the monosilicon in its vertical pulling procedure includes such steps as loading the element to be doped in the internal cylinder of doping apparatus, lowering the doping apparatus to the level of molten monosilicon, rotating quartz crucible to voltilize all said element, installing the seed crystal with particular crystal orientation, and pulling. It has high doping efficiency.

Description

1. Technical field [0001] The invention relates to a doping process and equipment in single crystal growth by self-melting pulling method, more specifically to a doping method and equipment for producing single crystal silicon rods. 2. Background technology [0002] Most semiconductor silicon single crystals are produced by the Czochralski method. In this method, polysilicon is put into a quartz crucible, heated and melted, and then the molten silicon is slightly cooled, given a certain degree of supercooling, and a silicon single crystal (called a seed crystal) with a specific crystal orientation is placed In contact with the molten silicon, by adjusting the temperature of the melt and the upward lifting speed of the seed crystal, when the seed crystal grows to a diameter close to the target, increase the lifting speed to make the single crystal grow with a nearly constant diameter. At the end of the growth process, when the silicon melt in the crucible has not completely ...

Claims

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Application Information

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IPC IPC(8): C30B15/04
Inventor 屠海令秦福周旗钢张果虎方锋吴志强戴小林
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD
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