Method for promoting performance of flash memory by using microcrystalline silicon film as floating gate

Abstract

This invention relates to a method for adding Hydrogen into silane when it forms polysilicon to turn it to micro crystal lattice. When the micro crystal-lattice of polysilicon is used in the floating gate of a flash memory, it can improve its element property.

Description

(1) Technical field [0001] The present invention relates to a flash memory, in particular to a method for promoting the performance of the flash memory by using a floating gate of a microcrystalline silicon film. (2) Background technology [0002] A typical flash memory includes a memory array, which is arranged in rows and columns into a plurality of memory cells, each cell includes a floating gate field effect transistor to store charge, and the cells are usually grouped into a region Each unit cell in each block can use the charging effect of the floating gate as a random electrical operation program. The charge can be removed from the floating gate by the block erase program, and the charge in the floating gate The existence or erasure of determines the storage of data in the cell. [0003] figure 1 Shown is a cross-sectional view of a typical memory cell 5 used in a flash memory. The memory cell 5 includes an emitter 60 region and a collector 70 region, and the emitt...

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Problems solved by technology

[0008] In the traditional flash memory manufacturing process, the use of large-grain polysilicon film as a floating gate will cause many disadvantages, such as causing fast erasing (Fast Erase) or excessive writing (Fast program), wide initial voltage Distribution and accompanying problems such as tail-like distribution, performance degradation of the tunnel oxide layer, high polysilicon resistance and poor etching appearance, resulting in polysilicon residues, etc.

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