Dephotoresist agent

A photoresist and remover technology, applied in detergent compounding agents, optics, optomechanical equipment, etc., can solve problems such as reducing the removal efficiency of photoresist

Active Publication Date: 2004-08-04
MITSUBISHI GAS CHEM CO INC
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In addition, known photoresist strippers will reduce the efficiency of photoresist removal due to the absorption of carbon dioxide in the air during long-term use

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dephotoresist agent

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0043] Preparation of Formaldehyde-Monoethanolamine Condensate

[0044] (aldehyde / amine=0.5 molar ratio)

[0045] Under the condition that the solution temperature was 70°C or lower, 15 g of paraformaldehyde was slowly added to 61.0 g of monoethanolamine with stirring, thereby preparing a reaction product A in a solution state. All reaction steps were performed under nitrogen flow. reaction product A 13 The C-NMR spectrum (DMSO-d6) is shown in figure 1 middle. exist figure 1 Among them, EA represents monoethanolamine, mlEA represents hydroxymethylethanolamine, and FEA represents the reaction product of formaldehyde-monoethanolamine.

[0046] Synthesis Example 2

[0047] Preparation of Formaldehyde-Monoethanolamine Condensate

[0048] (aldehyde / amine=0.8 molar ratio)

[0049] Under the condition that the solution temperature was 70°C or lower, 24 g of paraformaldehyde was slowly added to 61.0 g of monoethanolamine with stirring, thereby preparing a reaction product A in...

Embodiment

[0057] 1 EA 65 Reaction product A 5 DMSO 30 20s

[0058] 2 EA 65 Reaction product A 5 DMAC 30 20s

[0059] 3 EA 65 Reaction product B 5 DMSO 30 30s

[0060]4 EA 66.5 Reaction product B 3.5 DMSO 30 40s

[0061] 5 EA 69 Reaction product A 1 DMSO 30 60s

Embodiment 11

[0086] Except for replacing monoethanolamine with isopropanolamine, the rest of the preparation steps of Synthesis Example 1 were repeated to prepare the formaldehyde-isopropanolamine reaction product. In the same manner as in Example 1, a photoresist removal test was carried out using the formaldehyde-monoethanolamine reaction product thus prepared. After 20 seconds of immersion, the photoresist layer was completely removed.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The photoresist stripping agent of the present invention contains a reaction product that is produced by the reaction of formaldehyde and an alkanol amine in a molar ratio of 0.8 or less. The photoresist stripping agent easily removes, at low temperatures in a short period of time, photoresist layers applied on substrates, photoresist layers remaining after etching and photoresist residues after ashing subsequent to etching. The photoresist stripping agent also removes the photoresist layers and photoresist residues without corroding substrates, wiring materials, insulating layers, etc. to enable the fine processing and provide high precision circuits.

Description

technical field [0001] Photoresists have been widely used in the lithographic printing process of various devices, including integrated circuits (such as IC and LSI), displays (such as LCD and EL devices), printed boards, microcomputers, DNA chips, and microdevices . In particular, the present invention relates to photoresist strippers for removing photoresist from various photoresist-bearing substrates. Background technique [0002] With conventional techniques, the photoresist is removed by means of an alkaline stripper. However, the removal efficiency of known alkaline removers for photoresists cannot satisfy the recently developed fine processing and rapid processing requirements for manufacturing semiconductor devices and liquid crystal display panels. Therefore, it is necessary to further improve the removal efficiency. A resist remover containing hydroxylamine has been proposed. However, hydroxylamine is easily decomposed. In order to solve the above-mentioned pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42C07C45/00C07H1/00C07H5/00C11D3/00G03F7/00G03F7/32H01L21/027H01L21/304
CPCG03F7/425G03F7/426E03D9/08
Inventor 池本一人
Owner MITSUBISHI GAS CHEM CO INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products