Phase shift mask, method for forming pattern using phase shift mask and manufacturing method for electronic device

Abstract

A phase shift mask of the present invention has a half tone light blocking film formed on a substrate and having an aperture for exposing a portion of the surface of substrate. The phase of the exposure light that has been transmitted through half tone light blocking film differs from the phase of the exposure light that has been transmitted through aperture by 180°. The light transmission rate defined by the ratio of the light intensity of the exposure light that has been transmitted through half tone light blocking film to the light intensity of the exposure light that has been transmitted through aperture is not less than 15% to not more than 25%. The dimension of aperture is not less than 0.26 to not more than 0.45 according to the measurement wherein wavelength lambda of the exposure light / numerical aperture NA is set at 1.

Description

technical field [0001] The present invention relates to a halftone type phase shift mask, a method for forming patterns using the phase shift mask, and a method for manufacturing electronic devices. Background technique [0002] In recent years, high integration and miniaturization in semiconductor integrated circuits have been remarkable. Along with this, miniaturization of circuit patterns formed on semiconductor substrates (hereinafter simply referred to as wafers) is rapidly progressing. [0003] In particular, photolithography is widely recognized as a fundamental technique in pattern formation. Thus, various developments and improvements have been made heretofore. However, the miniaturization of graphics is never-ending, and the requirement for increasing the resolution of graphics is still further enhanced. [0004] This photolithography technique refers to copying the pattern on the photomask (original picture) to the photoresist coated on the wafer, and using the...

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that it becomes difficult to form a hole pattern of a desired size

That is, since a mask pattern with a very small dimensional error is required, there is a problem that advanced technology is required in mask manufacturing and mask cost increases.

[0014] In addition, in the pattern formed by the existing hole pattern forming method, there is a problem of a decrease in the yield in the manufacture of semiconductor integrated circuits due to size non-uniformity, or if the pattern arrangement interval is increased to avoid this, then There is a problem of reduced integration

[0015] In addition, in order to eliminate the unevenness of the pattern size itself, there is a problem that a high-precision mask is required and the cost is increased.

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