Resist removing agent

A technology of resist stripper and heterocyclic compound, applied in instruments, electrical components, circuits, etc., can solve problems such as poor loop formation and difficult etching, and achieve the effect of preventing tin re-precipitation

Inactive Publication Date: 2004-09-29
MELTEX
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, the tin film re-deposited on the upper surface of metallic copper functions as an etching resist in the etching process of copper after the resist is peeled off, so that uniform etching becomes difficult, causing poor circuit formation, etc.

Method used

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  • Resist removing agent

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] (production of test piece)

[0030] A dry film resist (PHOTEC HN240 manufactured by Hitachi Chemical Industries, Ltd.) was used to form a pattern on a copper foil with resin on both sides (copper thickness 18 μm, glass epoxy substrate). Then, a tin-plated film with a film thickness of 5 μm was formed on the copper foil, and then cut out to a size of 5 cm×5 cm to prepare a test piece.

[0031] (Preparation of resist stripper)

[0032] As a heterocyclic compound having a structure represented by the above formula (1) in the molecule, 2-benzimidazole thiol, 2-mercapto-1-methylimidazole, 2-mercapto-1-methylimidazole, Add 2000ppm of 2-thiouracil, 2,4-dithiopyrimidine, and 2-mercapto-4-methylpyrimidine hydrochloride to 3% sodium hydroxide aqueous solution (liquid volume 200mL, liquid temperature 45°C) respectively to prepare 5 A resist stripper (Samples 1-5). In addition, to these resist strippers (Samples 1-5), a trace amount of copper-ammonia (Ansin) complex aqueous solu...

Embodiment 2

[0053] (production of test piece)

[0054] Test pieces were produced in the same manner as in Example 1.

[0055] (Preparation of resist stripper)

[0056] As a heterocyclic compound having a structure represented by the above formula (1) in the molecule, 2-benzimidazole thiol, 2-mercapto-1-methylimidazole, 2 -thiouracil, 2,4-dithiopyrimidine, and 2-mercapto-4-methylpyrimidine hydrochloride were added to 3% sodium hydroxide aqueous solution (liquid volume 200mL, liquid temperature 45°C) to reach the following According to the concentrations shown in Table 2 (8 concentration levels of 10-2000ppm), 40 kinds of resist strippers were prepared. In addition, 50 ppm of copper ions was contained by adding a trace amount of copper-ammonia complex aqueous solution to these resist strippers.

[0057] (Resist Stripping and Copper Foil Etching)

[0058] The resist peeling of the test piece was performed similarly to Example 1, and the copper foil etching process was performed after tha...

Embodiment 3

[0064] (production of test piece)

[0065] Test pieces were produced in the same manner as in Example 1.

[0066] (Preparation of resist stripper)

[0067] As a heterocyclic compound having a structure represented by the above formula (1) in the molecule, 2,4-dithiopyrimidine represented by the above structural formula (D) was prepared. Separately, a 3% monoethanolamine + 0.5% tetramethylammonium hydroxide aqueous solution (liquid volume: 200 mL, liquid temperature: 45° C.) was prepared. To this aqueous solution, 2000 ppm of the above-mentioned 2,4-dithiopyrimidine was added to prepare a resist stripper (sample 6). In addition, a trace amount of copper-ammonia complex aqueous solution was added to this resist stripper so as to contain copper ions at the concentrations shown in Table 3 below.

[0068] In addition, a resist stripper (comparative sample 8) composed only of 3% monoethanolamine + 0.5% tetramethylammonium hydroxide aqueous solution (liquid volume: 200 mL, liquid ...

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Abstract

The resist removing agent is prepared as an alkali aqueous solution containing at least a heterocyclic compound having the structure expressed by formula (1) in the molecule as an additive. The solution prevents re-crystallization of tin on copper caused by copper ions dissolving in the resist removing agent.

Description

technical field [0001] The present invention relates to a resist stripper, and more particularly to a resist stripper for forming a tin-plated film using a resist formed in a predetermined pattern on copper as a mask, and then stripping the resist from copper. Background technique [0002] For example, in the PWB (Printed Wiring Board) manufacturing process of the panel pattern secondary solder stripping method, an aqueous solution of an alkali metal hydroxide such as sodium hydroxide or potassium hydroxide is used for resist stripping after forming a solder plating film. As a resist stripping agent composed of such an alkaline aqueous solution, in order to prevent the dissolution of the solder plating film and the precipitation of lead, a resist stripping agent containing 1,10-phenanthroline or the like is disclosed (Japanese Unexamined Patent Publication No. 6-250401 Bulletin). In addition, we have developed a resist that can form patterns with high density and high defin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42H01L21/027H05K3/06H05K3/10
CPCG03F7/425H05K2203/0793H05K3/062H05K3/108H05K2203/124
Inventor 藤田康治堀越弘幸新井亨
Owner MELTEX
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