Method for growing p type zinc oxide crystal film by real-time nitrogen doping

A zinc oxide, p-type technology, used in gaseous chemical plating, semiconductor/solid-state device manufacturing, coating, etc., can solve the problem of low industrial value and achieve good repeatability and stability.

Inactive Publication Date: 2004-11-03
ZHEJIANG UNIV
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  • Abstract
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Problems solved by technology

The specific zinc oxide thin film preparation methods used are limited to methods such as molecular beam epitaxy, laser pulse deposition, magnetron s

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  • Method for growing p type zinc oxide crystal film by real-time nitrogen doping

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Embodiment Construction

[0018] The present invention is further described below in conjunction with specific examples.

[0019] First put the silicon wafer substrate on the sample holder 7 of the growth chamber 2 after surface cleaning, then close each air inlet, and vacuumize to 10 -4 pa, the substrate is heated by the substrate heater 8 so that its temperature reaches 450°C, and the organic zinc source carrier gas inlet pipe 3 and the oxygen source gas inlet pipe 5 will respectively contain high-purity (more than 99.999%) diethyl zinc Nitrogen, high purity (above 99.999%) N 2 O is passed into the growth chamber 2, so that diethylzinc and N 2 The molar flow rate of O is 10 μmol / min and 2000 μmol / min respectively, and the pressure in the growth chamber is controlled at 1Pa, and high-purity (more than 99.999%) nitrogen source gas-nitrogen is passed into the radio frequency atom generator 1 from the inlet pipe 4 simultaneously, and the nitrogen flow rate Be 2sccm, produce nitrogen atom by the effect ...

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Abstract

This invention discloses a method for real-time doping N to grow p type ZnO crystal film which uses activated and cracked N source gas to generate N atoms including: cleaning the substrate surface to put it in a metal organic chemical vapor deposition growth chamber pumped to at least 104pa then to heat the substrate to 350-950deg.C and an O source and pure organic Zn source are input into the chamber by a carrier gas to grow ZnO film on the substrate with the Molar flow of 5~10000mm mol/min and 0.1~1000mm mol/min, at the same time N atoms separated from the N source gas is input to the chamber and the internal pressure is controlled at 0.01-100pa so as to prepare a P type ZnO crystal film with the doped concentration at 1.0x10 to the power 15cm[-3]~1.0x10 to the power 19cm[-3].

Description

technical field [0001] The invention relates to a doping method for a p-type zinc oxide crystal thin film. Specifically, it relates to a method for growing a p-type zinc oxide crystal film by doping nitrogen in real time during metal organic chemical vapor deposition process of zinc oxide crystal film. Background technique [0002] As an important wide-bandgap semiconductor material, zinc oxide has great application prospects in the field of optoelectronics. However, in order to realize the application of ZnO-based devices, it is necessary to grow controllable n-type and p-type ZnO crystal thin films with a certain carrier concentration. At present, research on n-type zinc oxide crystal thin films has been relatively sufficient, and real-time, concentration-controllable growth of low-resistance n-type zinc oxide crystal thin films has been achieved. However, in order to prepare a light-emitting device from a zinc oxide crystal thin film, a zinc oxide pn junction must be pr...

Claims

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Application Information

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IPC IPC(8): C23C16/40H01L21/205
Inventor 叶志镇徐伟中赵炳辉朱丽萍黄靖云
Owner ZHEJIANG UNIV
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