Semiconductor laser devices
A laser and semiconductor technology, applied in semiconductor laser devices, semiconductor lasers, laser devices, etc., can solve the problems of reduced reflectivity controllability and reduced yield.
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Embodiment approach 1
[0044] attached figure 1 It is a configuration diagram showing the first embodiment of the present invention, and shows a vertical cross section along the optical axis. The laser chip is composed of a semiconductor substrate 1 such as GaAs, an active layer 2 , clad layers 3 formed above and below the active layer 2 , electrodes 4 formed above and below the clad layer 3 , and the like.
[0045] The semiconductor laser device is composed of the above-mentioned laser chip, a low reflection film 10 formed on the front end of the laser, a high reflection film 9 formed on the rear end of the laser, and the like.
[0046] The low-reflection film 10 is successively composed of a dielectric film 11 with a refractive index of n1 and a film thickness of d1, a dielectric film 12 with a refractive index of n2 and a film thickness of d2, a refractive index of n3 and a film thickness from the side in contact with the laser chip. A dielectric film 13 with a thickness of d3 and a dielectric ...
Embodiment approach 2
[0068] In this embodiment mode, the structure and attachment of the semiconductor laser device figure 1 The contents are the same, but the low-reflection film 10 is sequentially composed from the side in contact with the laser chip: a dielectric film 11 with a refractive index of n1 and a film thickness of d1, a dielectric film 12 with a refractive index of n2 and a film thickness of d2, A dielectric film 13 with a refractive index of n3 and a film thickness of d3 and a dielectric film 14 with a refractive index of n4 and a film thickness of d4 are formed, and the materials are selected so that the refractive indices n1-n4 satisfy the relationship of n2=n4
[0069] Taking the specific structure of the low-reflection film 10 as an example, when using a red semiconductor laser (equivalent refractive index: 3.817) with an oscillation wavelength of λ=660nm as the laser chip, use a refractive index n1 on the dielectric film 11 in contact with the laser chip =2.063 tantalum ...
Embodiment approach 3
[0082] In this embodiment, the structure of the semiconductor laser is attached figure 1 Similarly, in addition to the low-reflection film 10 of the above-mentioned 4-layer structure, a multilayer dielectric film composed of a combination of a fifth dielectric film and a sixth dielectric film is partially formed in the area other than the light-emitting point, thereby forming a reflectance ratio than a light-emitting film. Low reflection coating with small area where dots are located.
[0083] In a semiconductor laser for an optical disc (disc), since a so-called three-beam method is used for tracking the optical disc, the return light from the optical disc is often irradiated to an area other than the light-emitting point of the semiconductor laser chip. When the same reflective film is formed on the end face of the chip, the reflectance other than the light-emitting point is the same as the light-emitting point, so the return light from the optical disc is further reflected...
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Abstract
Description
Claims
Application Information
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