Process for preparing rare earth nano-films by sol-gal method

Inactive Publication Date: 2004-11-10
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method does not involve the use of rare earth elements to improve the quality of the film and improve the friction performance of the film.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Raw material used: monocrystalline silicon wafer, the molar ratio of each component of sol preparation is as follows: titanate: 1, ethanol: 5, diethanolamine: 1, water: 2, rare earth compound: 0.1, dimethylformamide (DMF ):1%.

[0020] First, pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace for about 5.5 hours, and naturally cool it at room temperature for about 7.5 hours, then take out the monocrystalline silicon wafer , rinsed repeatedly with deionized water, and dried in a desiccator. The treated monocrystalline silicon wafer was immersed in the prepared sol solution, and after standing for five minutes, the single crystal silicon wafer was pulled upward at a speed of 6 cm / min, and then stood in a desiccator for 10 minutes. Put it into an oven at 120°C to dry for 1 hour, so that the sol on the surface of the single crystal silicon wafer is basically dried, and repeat the abov...

Embodiment 2

[0024] Raw material used: single crystal silicon wafer, the molar ratio of each component of sol preparation is as follows: titanate: 1, ethanol: 4, diethanolamine: 1, water: 1, rare earth compound: 0.1, dimethyl formamide (DMF ):2%.

[0025] First, pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace for 5 hours, and naturally cool it at room temperature for about 7 hours, then take out the monocrystalline silicon wafer, Rinse repeatedly with deionized water and dry in a desiccator. The treated monocrystalline silicon wafer was immersed in the prepared sol solution, and after standing for five minutes, the single crystal silicon wafer was pulled upward at a speed of 6 cm / min, and then stood in a desiccator for 10 minutes. Put it into an oven at 150° C. for 2 hours to dry the sol on the surface of the single crystal silicon wafer, and repeat the above operations to prepare a multilayer fil...

Embodiment 3

[0029] Raw material used: monocrystalline silicon wafer, the molar ratio of each component of sol preparation is as follows: titanate: 1, ethanol: 5, diethanolamine: 1, water: 1, rare earth compound: 0.15, dimethyl formamide (DMF ):1%.

[0030] First, pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia with an electric furnace for about 6 hours, and naturally cool it at room temperature for about 8 hours, then take out the monocrystalline silicon wafer , rinsed repeatedly with deionized water, and dried in a desiccator. The treated monocrystalline silicon wafer was immersed in the prepared sol solution, and after standing for five minutes, the single crystal silicon wafer was pulled upward at a speed of 6 cm / min, and then stood in a desiccator for 10 minutes. Put it in an oven at 120°C to dry for about 1 hour, so that the sol on the surface of the single crystal silicon wafer is basically dry, and repeat the ab...

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Abstract

The invention is a preparing method of rare-earth nano film by sol-gel method. It preprocesses a monocrystalline silicon slice, soak the silicon slice in the royal water, heats the royal water by electric cooker, naturally cools at room temperature, takes out the silicon slice, repeatedly washes by deionized water, then places in dry vessel for drying; or preprocess the glass substrate slice by hydroxylation, processes by Priahan solution at room temperature, drip-washes by a large amount of deionized water and dries; dips the processed substrate slice in the prepared sol solution, placing still and then pulls, then places the substrate slice in the drier, puts in the oven for drying or repeats the above mentioned operations to prepare multilayer films; places the monocrystalline silicon slice or glass substrate slice covered with films into muffle for preserving heat, slowly raises the temperature to 500 deg.C, preserves heat and naturally cools to room temperature, and obtains the rare-earth nano film at once. It can reduce the friction coefficient from 0.5 without any film to 0.2, and has completely friction reducing action.

Description

technical field [0001] The invention relates to a preparation method of a nano film, in particular to a preparation method of a sol-gel method rare earth nano film, and belongs to the field of film preparation. Background technique [0002] The sol-gel method has the advantages of simple equipment, low cost, and can realize large-area special-shaped coating films. Especially through the chemical approach of the liquid phase, it is convenient to accurately control the material components to achieve the designed chemical ratio in the early stage of material preparation, and realize the material composition. The uniformity of the material reaches the nanometer level, or even the molecular level. Through the liquid phase process, the multi-component materials and composite materials that cannot be achieved by other processes are realized. Starting from the microstructure of the material, such as grafting, embedding, and fine compounding, the tailoring of material characteristics ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B05D1/18B05D3/00C03C17/25C23C20/00
Inventor 程先华白涛上官倩芡吴炬
Owner SHANGHAI JIAO TONG UNIV
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