Process for preparing rare earth nano-films by sol-gal method
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Embodiment 1
[0019] Raw material used: monocrystalline silicon wafer, the molar ratio of each component of sol preparation is as follows: titanate: 1, ethanol: 5, diethanolamine: 1, water: 2, rare earth compound: 0.1, dimethylformamide (DMF ):1%.
[0020] First, pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace for about 5.5 hours, and naturally cool it at room temperature for about 7.5 hours, then take out the monocrystalline silicon wafer , rinsed repeatedly with deionized water, and dried in a desiccator. The treated monocrystalline silicon wafer was immersed in the prepared sol solution, and after standing for five minutes, the single crystal silicon wafer was pulled upward at a speed of 6 cm / min, and then stood in a desiccator for 10 minutes. Put it into an oven at 120°C to dry for 1 hour, so that the sol on the surface of the single crystal silicon wafer is basically dried, and repeat the abov...
Embodiment 2
[0024] Raw material used: single crystal silicon wafer, the molar ratio of each component of sol preparation is as follows: titanate: 1, ethanol: 4, diethanolamine: 1, water: 1, rare earth compound: 0.1, dimethyl formamide (DMF ):2%.
[0025] First, pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace for 5 hours, and naturally cool it at room temperature for about 7 hours, then take out the monocrystalline silicon wafer, Rinse repeatedly with deionized water and dry in a desiccator. The treated monocrystalline silicon wafer was immersed in the prepared sol solution, and after standing for five minutes, the single crystal silicon wafer was pulled upward at a speed of 6 cm / min, and then stood in a desiccator for 10 minutes. Put it into an oven at 150° C. for 2 hours to dry the sol on the surface of the single crystal silicon wafer, and repeat the above operations to prepare a multilayer fil...
Embodiment 3
[0029] Raw material used: monocrystalline silicon wafer, the molar ratio of each component of sol preparation is as follows: titanate: 1, ethanol: 5, diethanolamine: 1, water: 1, rare earth compound: 0.15, dimethyl formamide (DMF ):1%.
[0030] First, pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia with an electric furnace for about 6 hours, and naturally cool it at room temperature for about 8 hours, then take out the monocrystalline silicon wafer , rinsed repeatedly with deionized water, and dried in a desiccator. The treated monocrystalline silicon wafer was immersed in the prepared sol solution, and after standing for five minutes, the single crystal silicon wafer was pulled upward at a speed of 6 cm / min, and then stood in a desiccator for 10 minutes. Put it in an oven at 120°C to dry for about 1 hour, so that the sol on the surface of the single crystal silicon wafer is basically dry, and repeat the ab...
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